2SD1060Q Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1060Q
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO220
2SD1060Q Transistor Equivalent Substitute - Cross-Reference Search
2SD1060Q Datasheet (PDF)
2sd1060q 2sd1060r 2sd1060s.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD1060DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V(Max) @I = 3.0ACE(sat) CComplement to Type 2SB824APPLICATIONSDesigned for relay drivers, high-speed inverters, converters,and other general large-current switching application
2sd1060.pdf
Ordering number : EN686J2SB824 / 2SD1060SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SB824 / 2SD106050V / 5A Switching ApplicationsApplications Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching.Features Low collector-to-emitter saturation voltage : VCE(sat)= (--)0.4V max / IC= (--)3A,
2sd1060.pdf
Ordering number : EN686K2SD1060Bipolar Transistorhttp://onsemi.com( )50V, 5A, Low VCE sat NPN TO-220-3LApplications Suitable for relay drivers, high-speed inverters, converters, and other general large-current switchingFeatures Low collector-to-emitter saturation voltage : VCE(sat)=0.3V max / IC=3A, IB= 0.3ASpecificationsAbsolute Maximum Ratings at Ta=25CParamete
2sd1060.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR FEATURES * Low collector-to-emitter saturation voltage: VCE(SAT)=0.4V max/IC=3A, IB=0.3A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD1060L-x-AB3-R 2SD1060G-x-AB3-R SOT-89 B C E Tape Reel2SD1060L-x-T60-K 2SD1060G-x-T6
2sd1060.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1060 DESCRIPTION With TO-220 package Low collector-emitter saturation voltage Complement to type 2SB824 APPLICATIONS Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 m
2sd1060.pdf
isc Silicon NPN Power Transistor 2SD1060DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V(Max) @I = 3.0ACE(sat) CComplement to Type 2SB824Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters, converters,
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
