2SD108 Todos los transistores

 

2SD108 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD108
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 10 MHz
   Ganancia de corriente contínua (hfe): 4000
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar 2SD108

 

2SD108 Datasheet (PDF)

 ..1. Size:180K  inchange semiconductor
 2sd108.pdf

2SD108 2SD108

INCHANGE Semiconductorisc Silicon NPN Darlingtion Power Transistor 2SD108DESCRIPTIONHigh DC current gain-: h = 2000 (Min) @ I = 1AFE CCollector-Emitter Sustaining Voltage-: V =80V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingHammer driversSeries and shunt regulatorAudio amplifi

 0.1. Size:111K  mospec
 2sd1088.pdf

2SD108 2SD108

AAA

 0.2. Size:56K  no
 2sd1083.pdf

2SD108

 0.3. Size:212K  inchange semiconductor
 2sd1088.pdf

2SD108 2SD108

isc Silicon NPN Darlington Power Transistor 2SD1088DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)High DC Current Gain-: h = 2000(Min.)@I = 2AFE CLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in hig

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: NST45011MW6T1G | TIX809 | FX3299S | BDX30-6 | BDX64L

 

 
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