All Transistors. 2SD108 Datasheet

 

2SD108 Datasheet and Replacement


   Type Designator: 2SD108
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 4000
   Noise Figure, dB: -
   Package: TO3
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2SD108 Datasheet (PDF)

 ..1. Size:180K  inchange semiconductor
 2sd108.pdf pdf_icon

2SD108

INCHANGE Semiconductorisc Silicon NPN Darlingtion Power Transistor 2SD108DESCRIPTIONHigh DC current gain-: h = 2000 (Min) @ I = 1AFE CCollector-Emitter Sustaining Voltage-: V =80V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingHammer driversSeries and shunt regulatorAudio amplifi

 0.1. Size:111K  mospec
 2sd1088.pdf pdf_icon

2SD108

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 0.2. Size:56K  no
 2sd1083.pdf pdf_icon

2SD108

 0.3. Size:212K  inchange semiconductor
 2sd1088.pdf pdf_icon

2SD108

isc Silicon NPN Darlington Power Transistor 2SD1088DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)High DC Current Gain-: h = 2000(Min.)@I = 2AFE CLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in hig

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BDY17 | K2126 | BLX20 | 3DA30F | MJH16006 | CJF715 | BD612

Keywords - 2SD108 transistor datasheet

 2SD108 cross reference
 2SD108 equivalent finder
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