2SD108 Specs and Replacement
Type Designator: 2SD108
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 4000
Package: TO3
2SD108 Substitution
- BJT ⓘ Cross-Reference Search
2SD108 datasheet
INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD108 DESCRIPTION High DC current gain- h = 2000 (Min) @ I = 1A FE C Collector-Emitter Sustaining Voltage- V =80V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Hammer drivers Series and shunt regulator Audio amplifi... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD1088 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) High DC Current Gain- h = 2000(Min.)@I = 2A FE C Low Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in hig... See More ⇒
Detailed specifications: 2SD1074, 2SD1075, 2SD1076, 2SD1077, 2SD1077L, 2SD1077S, 2SD1078, 2SD1079, 2SC945, 2SD1080, 2SD1080L, 2SD1080S, 2SD1081, 2SD1081L, 2SD1081S, 2SD1082, 2SD1083
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