2SD1176A Todos los transistores

 8.1. Size:69K  wingshing
 2sd1175.pdf

NPN TRIPLE DIFFUSED 2SD1175 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Coll

 8.2. Size:196K  inchange semiconductor
 2sd1170.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1170 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min.) (BR)CEO Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Driver for solenoid,motor and general purpose applic

 8.3. Size:198K  inchange semiconductor
 2sd1175.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1175 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Collector-Emitter Saturation Voltage- V = 6.0V(Max.)@ I = 5.0A CE(sat) C Built-in Damper Diode Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal defl

 8.4. Size:234K  inchange semiconductor
 2sd1172.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1172 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Collector-Emitter Saturation Voltage- V = 4.0V(Max.)@ I = 2.5A CE(sat) C Built-in Damper Diode Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal defl

 8.5. Size:198K  inchange semiconductor
 2sd1173.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1173 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Collector-Emitter Saturation Voltage- V = 4.0V(Max.)@ I = 3.0A CE(sat) C Built-in Damper Diode Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal defl

 8.6. Size:198K  inchange semiconductor
 2sd1171.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1171 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Collector-Emitter Saturation Voltage- V = 4.0V(Max.)@ I = 2.0A CE(sat) C Built-in Damper Diode Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal defl