Справочник транзисторов. 2SD1176A

 

Биполярный транзистор 2SD1176A Даташит. Аналоги


   Наименование производителя: 2SD1176A
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 45 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимальный постоянный ток коллектора (Ic): 8 A
   Предельная температура PN-перехода (Tj): 175 °C
   Статический коэффициент передачи тока (hfe): 4000
   Корпус транзистора: TO220
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2SD1176A Datasheet (PDF)

 8.1. Size:69K  wingshing
 2sd1175.pdf pdf_icon

2SD1176A

NPN TRIPLE DIFFUSED2SD1175 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS (Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Coll

 8.2. Size:196K  inchange semiconductor
 2sd1170.pdf pdf_icon

2SD1176A

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1170DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min.)(BR)CEOLow Collector Saturation VoltageHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDriver for solenoid,motor and general purpose applic

 8.3. Size:198K  inchange semiconductor
 2sd1175.pdf pdf_icon

2SD1176A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1175DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 6.0V(Max.)@ I = 5.0ACE(sat) CBuilt-in Damper DiodeWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal defl

 8.4. Size:234K  inchange semiconductor
 2sd1172.pdf pdf_icon

2SD1176A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1172DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 4.0V(Max.)@ I = 2.5ACE(sat) CBuilt-in Damper DiodeWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal defl

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Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: MUN2232LT1 | MT0414 | MP8611 | 2SC516 | 2SC4643 | MP8213 | BC847BHZG

 

 
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