Биполярный транзистор 2SD1176A - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1176A
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 45 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 175 °C
Статический коэффициент передачи тока (hfe): 4000
Корпус транзистора: TO220
2SD1176A Datasheet (PDF)
2sd1175.pdf
NPN TRIPLE DIFFUSED2SD1175 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS (Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Coll
2sd1170.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1170DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min.)(BR)CEOLow Collector Saturation VoltageHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDriver for solenoid,motor and general purpose applic
2sd1175.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1175DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 6.0V(Max.)@ I = 5.0ACE(sat) CBuilt-in Damper DiodeWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal defl
2sd1172.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1172DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 4.0V(Max.)@ I = 2.5ACE(sat) CBuilt-in Damper DiodeWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal defl
2sd1173.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1173DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 4.0V(Max.)@ I = 3.0ACE(sat) CBuilt-in Damper DiodeWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal defl
2sd1171.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1171DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 4.0V(Max.)@ I = 2.0ACE(sat) CBuilt-in Damper DiodeWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal defl
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050