2SD1176A pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2SD1176A Specs and Replacement

   Type Designator: 2SD1176A
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings

   Maximum Collector Power Dissipation (Pc): 45 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

   Forward Current Transfer Ratio (hFE), MIN: 4000
   Noise Figure, dB: -
   Package: TO220

2SD1176A Substitution

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2SD1176A datasheet

8.1. Size:69K wingshing
2sd1175.pdf pdf_icon

NPN TRIPLE DIFFUSED 2SD1175 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Coll... See More ⇒

8.2. Size:196K inchange semiconductor
2sd1170.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1170 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min.) (BR)CEO Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Driver for solenoid,motor and general purpose applic... See More ⇒

8.3. Size:198K inchange semiconductor
2sd1175.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1175 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Collector-Emitter Saturation Voltage- V = 6.0V(Max.)@ I = 5.0A CE(sat) C Built-in Damper Diode Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal defl... See More ⇒

8.4. Size:234K inchange semiconductor
2sd1172.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1172 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Collector-Emitter Saturation Voltage- V = 4.0V(Max.)@ I = 2.5A CE(sat) C Built-in Damper Diode Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal defl... See More ⇒