2SD1186 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1186
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 1200 V
Tensión colector-emisor (Vce): 800 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Empaquetado / Estuche: TO3
Búsqueda de reemplazo de transistor bipolar 2SD1186
2SD1186 Datasheet (PDF)
1.1. 2sd1186.pdf 
Size:114K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1186 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage Ў¤ High speed switching APPLICATIONS Ў¤ Power switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO
4.1. 2sd1187.pdf Size:227K _toshiba
4.2. 2sd1189.pdf Size:135K _rohm
4.3. 2sd1185.pdf Size:56K _no
4.4. 2sd1180.pdf Size:114K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1180 DESCRIPTION Ў¤ With TO-126 package Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Designed for use in audio and radio frequency power amplifiers PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IC
4.5. 2sd1187.pdf Size:240K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1187 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.) @ IC= 6A ·High Power Dissipation APPLICATIONS ·High power switching applications ·DC-DC converter and DC-AC inverter applications ABSOLUTE MAXIMUM RATIN
4.6. 2sd1185.pdf Size:114K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1185 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage Ў¤ High speed switching APPLICATIONS Ў¤ Power switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO
Otros transistores... 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , TIP122 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 .
