2SD1186 Todos los transistores

 

2SD1186 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1186

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-base (Vcb): 1200 V

Tensión colector-emisor (Vce): 800 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 80

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de transistor bipolar 2SD1186

 

2SD1186 Datasheet (PDF)

1.1. 2sd1186.pdf Size:114K _inchange_semiconductor

2SD1186
2SD1186

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1186 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage Ў¤ High speed switching APPLICATIONS Ў¤ Power switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO

4.1. 2sd1187.pdf Size:227K _toshiba

2SD1186
2SD1186



4.2. 2sd1189.pdf Size:135K _rohm

2SD1186

 4.3. 2sd1185.pdf Size:56K _no

2SD1186

4.4. 2sd1180.pdf Size:114K _inchange_semiconductor

2SD1186
2SD1186

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1180 DESCRIPTION Ў¤ With TO-126 package Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Designed for use in audio and radio frequency power amplifiers PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IC

 4.5. 2sd1187.pdf Size:240K _inchange_semiconductor

2SD1186
2SD1186

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1187 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.) @ IC= 6A ·High Power Dissipation APPLICATIONS ·High power switching applications ·DC-DC converter and DC-AC inverter applications ABSOLUTE MAXIMUM RATIN

4.6. 2sd1185.pdf Size:114K _inchange_semiconductor

2SD1186
2SD1186

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1185 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage Ў¤ High speed switching APPLICATIONS Ў¤ Power switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO

Otros transistores... 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , TIP122 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 .

 
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