2SD1186 - Аналоги. Основные параметры
Наименование производителя: 2SD1186
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 50
W
Макcимально допустимое напряжение коллектор-база (Ucb): 1200
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800
V
Макcимальный постоянный ток коллектора (Ic): 5
A
Предельная температура PN-перехода (Tj): 175
°C
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора:
TO3
Аналоги (замена) для 2SD1186
-
подбор ⓘ биполярного транзистора по параметрам
2SD1186 - технические параметры
..1. Size:202K inchange semiconductor
2sd1186.pdf 
isc Silicon NPN Power Transistor 2SD1186 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitte
8.5. Size:183K inchange semiconductor
2sd1180.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1180 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 110V (Min) (BR)CEO Low collector saturation voltage With TO-126 package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio and radio frequency power amplifiers applications. ABSOL
8.6. Size:198K inchange semiconductor
2sd1184.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1184 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Reliability Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
8.7. Size:199K inchange semiconductor
2sd1187.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1187 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Collector-Emitter Saturation Voltage- V = 0.5V(Max.)@ I = 6.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications DC-DC
8.8. Size:202K inchange semiconductor
2sd1185.pdf 
isc Silicon NPN Power Transistor 2SD1185 DESCRIPTION High Breakdown Voltage- V = 1200V (Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V Collector-Emitte
8.9. Size:198K inchange semiconductor
2sd1183.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1183 DESCRIPTION High Breakdown Voltage- V = 1200V (Min) CBO High Reliability Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
Другие транзисторы... 2SD1179
, 2SD118
, 2SD1180
, 2SD1181
, 2SD1182
, 2SD1183
, 2SD1184
, 2SD1185
, A1015
, 2SD1187
, 2SD1187O
, 2SD1187Y
, 2SD1188
, 2SD1189
, 2SD119
, 2SD1190
, 2SD1191
.
