All Transistors. 2SD1186 Datasheet

 

2SD1186 Datasheet and Replacement


   Type Designator: 2SD1186
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 1200 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO3
 

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2SD1186 Datasheet (PDF)

 ..1. Size:202K  inchange semiconductor
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2SD1186

isc Silicon NPN Power Transistor 2SD1186DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitte

 8.1. Size:505K  1
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2SD1186

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2SD1186

 8.3. Size:135K  rohm
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2SD1186

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N4296 | MPS-U57 | 2SB435Y | EMH6FHA | 2N3680 | EMB75 | KT3128B1

Keywords - 2SD1186 transistor datasheet

 2SD1186 cross reference
 2SD1186 equivalent finder
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