2SD1457 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors2SD1457, 2SD1457ASilicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm15.0 0.3 5.0 0.211.0 0.2 3.2FeaturesHigh foward current transfer ratio hFE 3.2 0.1High collector to base voltage VCBOFull-pack package which can be installed to the heat sink withone screw2.0 0.22.0 0.1Absolute Maximum Ratings (TC=25C)

isc Silicon NPN Darlington Power Transistor 2SD1457DESCRIPTIONHigh DC Current Gain: h = 700(Min.)@ I = 2A, V = 2VFE C CEHigh Collector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1457 2SD1457A DESCRIPTION With TO-3PFa package High DC current gain DARLINGTON High VCBO APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PFa) and symbol 3 EmitterAbsolute maximum ratings

Ordering number:EN1256C PNP/NPN Planar Silicon Transistors2SB1037/2SD1459Color TV Vertical Output, Sound OutputApplicationsFeatures Package Dimensions High allowable collector dissipation (PC=2W).unit:mm Wide ASO.2010C[2SB1037/2SD1459]JEDEC : TO-220AB 1 : Base( ) : 2SB1037EIAJ : SC-46 2 : Collector3 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25

Transistor2SD1458Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board. 0.850.55 0.1 0.45 0

Transistor2SD1458Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board. 0.850.55 0.1 0.45 0

Transistor2SD1450Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Low collector to emitter saturation voltage VCE(sat).markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter vol

Transistor2SD1450Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Low collector to emitter saturation voltage VCE(sat).markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter vol

isc Silicon NPN Power Transistor 2SD1459DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1037Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV vertical output, sound outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon NPN Power Transistor 2SD1452DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

isc Silicon NPN Power Transistor 2SD1454DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

isc Silicon NPN Power Transistor 2SD1456DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

isc Silicon NPN Power Transistor 2SD1455DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

isc Silicon NPN Power Transistor 2SD1453DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1451DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER