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2SD1457 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1457

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 100 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 4000

Empaquetado / Estuche: TO126

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2SD1457 Datasheet (PDF)

0.1. 2sd1457.pdf Size:61K _panasonic

2SD1457
2SD1457

Power Transistors2SD1457, 2SD1457ASilicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm15.0 0.3 5.0 0.211.0 0.2 3.2FeaturesHigh foward current transfer ratio hFE 3.2 0.1High collector to base voltage VCBOFull-pack package which can be installed to the heat sink withone screw2.0 0.22.0 0.1Absolute Maximum Ratings (TC=25C)

0.2. 2sd1457.pdf Size:222K _inchange_semiconductor

2SD1457
2SD1457

isc Silicon NPN Darlington Power Transistor 2SD1457DESCRIPTIONHigh DC Current Gain: h = 700(Min.)@ I = 2A, V = 2VFE C CEHigh Collector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

 0.3. 2sd1457 2sd1457a.pdf Size:119K _inchange_semiconductor

2SD1457
2SD1457

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1457 2SD1457A DESCRIPTION With TO-3PFa package High DC current gain DARLINGTON High VCBO APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PFa) and symbol 3 EmitterAbsolute maximum ratings

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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