All Transistors. 2SD1457 Datasheet

 

2SD1457 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1457

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 4000

Noise Figure, dB: -

Package: TO126

2SD1457 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1457 Datasheet (PDF)

1.1. 2sd1457.pdf Size:61K _panasonic

2SD1457
2SD1457

Power Transistors 2SD1457, 2SD1457A Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features High foward current transfer ratio hFE ? 3.2 0.1 High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw 2.0 0.2 2.0 0.1 Absolute Maximum Ratings (TC=25?C) 1.1 0.1 0

1.2. 2sd1457 2sd1457a.pdf Size:119K _inchange_semiconductor

2SD1457
2SD1457

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1457 2SD1457A DESCRIPTION Ў¤ With TO-3PFa package Ў¤ High DC current gain Ў¤ DARLINGTON Ў¤ High VCBO APPLICATIONS Ў¤ For power amplification PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PFa) and symbol DESCRIPTION Absolute maximum ratings (Ta=

 4.1. 2sd1458.pdf Size:48K _st

2SD1457
2SD1457

SD1458 RF & MICROWAVE TRANSISTORS TV\LINEAR APPLICATIONS .170 - 230 MHz .28 VOLTS .IMD -55 dB .COMMON EMITTER .GOLD METALLIZATION .INTERNAL INPUT MATCHING .HIGH SATURATED POWER CAPABILITY .500 6LFL (M111) .DESIGNED FOR HIGH POWER LINEAR epoxy sealed OPERATION ORDER CODE BRANDING .P 14 W MIN. WITH 14.0 dB GAIN OUT = SD1458 SD1458 PIN CONNECTION DESCRIPTION The SD1458 is a gold m

4.2. 2sd1455.pdf Size:52K _st

2SD1457
2SD1457

SD1455 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS .170 - 230 MHz .25 VOLTS .IMD - 55dB .COMMON EMITTER .GOLD METALLIZATION .HIGH SATURATED POWER CAPABILITY .DIFFUSED EMITTER BALLAST .500 4L STUD (M130) RESISTORS epoxy sealed .DESIGNED FOR HIGH POWER LINEAR ORDER CODE BRANDING OPERATION SD1455 SD1455 .P 20 W MIN. WITH 8.0 dB GAIN = OUT PIN CONNECTION DESCRIPTION The SD1

 4.3. 2sd1459.pdf Size:121K _sanyo

2SD1457
2SD1457

Ordering number:EN1256C PNP/NPN Planar Silicon Transistors 2SB1037/2SD1459 Color TV Vertical Output, Sound Output Applications Features Package Dimensions High allowable collector dissipation (PC=2W). unit:mm Wide ASO. 2010C [2SB1037/2SD1459] JEDEC : TO-220AB 1 : Base ( ) : 2SB1037 EIAJ : SC-46 2 : Collector 3 : Emitter Specifications Absolute Maximum Ratings at Ta = 25?C P

4.4. 2sd1458.pdf Size:37K _panasonic

2SD1457
2SD1457

Transistor 2SD1458 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Ab

 4.5. 2sd1450 e.pdf Size:44K _panasonic

2SD1457
2SD1457

Transistor 2SD1450 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low collector to emitter saturation voltage VCE(sat). marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage

4.6. 2sd1458 e.pdf Size:41K _panasonic

2SD1457
2SD1457

Transistor 2SD1458 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Ab

4.7. 2sd1450.pdf Size:39K _panasonic

2SD1457
2SD1457

Transistor 2SD1450 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low collector to emitter saturation voltage VCE(sat). marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage

4.8. 2sd1453.pdf Size:53K _no

2SD1457

4.9. 2sd1453.pdf Size:119K _inchange_semiconductor

2SD1457
2SD1457

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1453 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High voltage,high speed Ў¤ Built-in damper diode APPLICATIONS Ў¤ For TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum

4.10. 2sd1451.pdf Size:119K _inchange_semiconductor

2SD1457
2SD1457

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1451 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High voltage,high speed Ў¤ Built-in damper diode APPLICATIONS Ў¤ For TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum

4.11. 2sd1456.pdf Size:119K _inchange_semiconductor

2SD1457
2SD1457

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1456 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High voltage,high speed Ў¤ Built-in damper diode APPLICATIONS Ў¤ For TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum

4.12. 2sd1452.pdf Size:119K _inchange_semiconductor

2SD1457
2SD1457

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1452 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High voltage,high speed Ў¤ Built-in damper diode APPLICATIONS Ў¤ For TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum

4.13. 2sd1455.pdf Size:119K _inchange_semiconductor

2SD1457
2SD1457

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1455 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High voltage,high speed Ў¤ Built-in damper diode APPLICATIONS Ў¤ For TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum

4.14. 2sd1454.pdf Size:119K _inchange_semiconductor

2SD1457
2SD1457

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1454 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High voltage,high speed Ў¤ Built-in damper diode APPLICATIONS Ў¤ For TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum

4.15. 2sd1459.pdf Size:168K _inchange_semiconductor

2SD1457
2SD1457

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1459 DESCRIPTION Ў¤ With TO-220 package Ў¤ High allowable collector dissipation. Ў¤ Complement to type 2SB1037 APPLICATIONS Ў¤ Color TV vertical output application Ў¤ Sound output application PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings

Datasheet: 2SC4323 , 2SC4324 , 2SC4325 , 2SC4326 , 2SC4327 , 2SC4328 , 2SC4329 , 2SC433 , BC237 , 2SC4331 , 2SC4332 , 2SC4333 , 2SC4334 , 2SC4335 , 2SC4336 , 2SC4337 , 2SC4338 .

 
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