2SD1457 PDF and Equivalents Search

 ..1. Size:61K  panasonic

 2sd1457.pdf

Power Transistors 2SD1457, 2SD1457A Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features High foward current transfer ratio hFE 3.2 0.1 High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw 2.0 0.2 2.0 0.1 Absolute Maximum Ratings (TC=25 C)... See More ⇒

 ..2. Size:222K  inchange semiconductor

 2sd1457.pdf

isc Silicon NPN Darlington Power Transistor 2SD1457 DESCRIPTION High DC Current Gain h = 700(Min.)@ I = 2A, V = 2V FE C CE High Collector-Emitter Sustaining Voltage- V = 150V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒

 ..3. Size:119K  inchange semiconductor

 2sd1457 2sd1457a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1457 2SD1457A DESCRIPTION With TO-3PFa package High DC current gain DARLINGTON High VCBO APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PFa) and symbol 3 Emitter Absolute maximum ratings ... See More ⇒

 8.1. Size:121K  sanyo

 2sb1037 2sd1459.pdf

Ordering number EN1256C PNP/NPN Planar Silicon Transistors 2SB1037/2SD1459 Color TV Vertical Output, Sound Output Applications Features Package Dimensions High allowable collector dissipation (PC=2W). unit mm Wide ASO. 2010C [2SB1037/2SD1459] JEDEC TO-220AB 1 Base ( ) 2SB1037 EIAJ SC-46 2 Collector 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25... See More ⇒

 8.2. Size:41K  panasonic

 2sd1458 e.pdf

Transistor 2SD1458 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0... See More ⇒

 8.3. Size:37K  panasonic

 2sd1458.pdf

Transistor 2SD1458 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0... See More ⇒

 8.4. Size:39K  panasonic

 2sd1450.pdf

Transistor 2SD1450 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low collector to emitter saturation voltage VCE(sat). marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter vol... See More ⇒

 8.5. Size:44K  panasonic

 2sd1450 e.pdf

Transistor 2SD1450 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low collector to emitter saturation voltage VCE(sat). marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter vol... See More ⇒

 8.6. Size:53K  no

 2sd1453.pdf

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 8.7. Size:212K  inchange semiconductor

 2sd1459.pdf

isc Silicon NPN Power Transistor 2SD1459 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1037 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV vertical output, sound output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒

 8.8. Size:212K  inchange semiconductor

 2sd1452.pdf

isc Silicon NPN Power Transistor 2SD1452 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒

 8.9. Size:212K  inchange semiconductor

 2sd1454.pdf

isc Silicon NPN Power Transistor 2SD1454 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒

 8.10. Size:212K  inchange semiconductor

 2sd1456.pdf

isc Silicon NPN Power Transistor 2SD1456 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒

 8.11. Size:213K  inchange semiconductor

 2sd1455.pdf

isc Silicon NPN Power Transistor 2SD1455 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒

 8.12. Size:214K  inchange semiconductor

 2sd1453.pdf

isc Silicon NPN Power Transistor 2SD1453 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒

 8.13. Size:188K  inchange semiconductor

 2sd1451.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1451 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒