2SD152 Todos los transistores

 0.1. Size:258K  1
 2sd1526.pdf

Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Request

 0.2. Size:175K  toshiba
 2sd1525.pdf

2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor) 2SD1525 High Current Switching Applications Unit mm High collector current IC = 30 A High DC current gain hFE = 1000 (min) (VCE = 5 V, IC = 20 A) Monolithic construction with built-in base-emitter shunt resistor. Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol

 0.3. Size:32K  hitachi
 2sd1527.pdf

2SD1527 Silicon NPN Triple Diffused Application High voltage power amplifier Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 1000 V Collector to emitter voltage VCEO 1000 V Emitter to base voltage VEBO 5V Collector current IC 0.5 A Collector power dissipation PC 1.8 W

 0.4. Size:373K  hitachi
 2sd1520.pdf

 0.5. Size:34K  hitachi
 2sd1521.pdf

2SD1521 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1. Emitter ID 2. Collector 3. Base 1 2 k 0.5 k 2 3 (Typ) (Typ) 1 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7V Collector current IC 1.5 A Collector peak current IC (peak) 3.0 A Collector

 0.6. Size:209K  inchange semiconductor
 2sd1523.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1523 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 450V(Min) (BR)CEO High DC Current Gain h = 500(Min) @ I = 8A, V = 3V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and

 0.7. Size:206K  inchange semiconductor
 2sd1522.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1522 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 450V(Min) (BR)CEO High DC Current Gain h = 500(Min) @ I = 5A, V = 3V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and

 0.8. Size:214K  inchange semiconductor
 2sd1528.pdf

isc Silicon NPN Power Transistor 2SD1528 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Good Linearity of h FE High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier,power switching appli

 0.9. Size:213K  inchange semiconductor
 2sd1525.pdf

isc Silicon NPN Darlington Power Transistor 2SD1525 DESCRIPTION High DC Current Gain h = 1000(Min.)@ I = 20A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

 0.10. Size:206K  inchange semiconductor
 2sd1524.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1524 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 450V(Min) (BR)CEO High DC Current Gain h = 300(Min) @ I = 5A, V = 3V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and