Справочник транзисторов. 2SD152

 

Биполярный транзистор 2SD152 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SD152
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 150 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 70 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 155 °C
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: TO66

 Аналоги (замена) для 2SD152

 

 

2SD152 Datasheet (PDF)

 0.1. Size:258K  1
2sd1526.pdf

2SD152
2SD152

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Request

 0.2. Size:175K  toshiba
2sd1525.pdf

2SD152
2SD152

2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor) 2SD1525 High Current Switching Applications Unit: mm High collector current: IC = 30 A High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) Monolithic construction with built-in base-emitter shunt resistor. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol

 0.3. Size:32K  hitachi
2sd1527.pdf

2SD152
2SD152

2SD1527Silicon NPN Triple DiffusedApplicationHigh voltage power amplifierOutlineTO-220AB1. Base2. Collector(Flange)13. Emitter23Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 1000 VCollector to emitter voltage VCEO 1000 VEmitter to base voltage VEBO 5VCollector current IC 0.5 ACollector power dissipation PC 1.8 W

 0.4. Size:373K  hitachi
2sd1520.pdf

2SD152
2SD152

 0.5. Size:34K  hitachi
2sd1521.pdf

2SD152
2SD152

2SD1521Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-126 MOD231. Emitter ID2. Collector3. Base12 k 0.5 k23(Typ) (Typ)1Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 7VCollector current IC 1.5 ACollector peak current IC (peak) 3.0 ACollector

 0.6. Size:209K  inchange semiconductor
2sd1523.pdf

2SD152
2SD152

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1523DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 450V(Min)(BR)CEOHigh DC Current Gain: h = 500(Min) @ I = 8A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and

 0.7. Size:206K  inchange semiconductor
2sd1522.pdf

2SD152
2SD152

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1522DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 450V(Min)(BR)CEOHigh DC Current Gain: h = 500(Min) @ I = 5A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and

 0.8. Size:214K  inchange semiconductor
2sd1528.pdf

2SD152
2SD152

isc Silicon NPN Power Transistor 2SD1528DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier,power switching appli

 0.9. Size:213K  inchange semiconductor
2sd1525.pdf

2SD152
2SD152

isc Silicon NPN Darlington Power Transistor 2SD1525DESCRIPTIONHigh DC Current Gain: h = 1000(Min.)@ I = 20AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

 0.10. Size:206K  inchange semiconductor
2sd1524.pdf

2SD152
2SD152

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1524DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 450V(Min)(BR)CEOHigh DC Current Gain: h = 300(Min) @ I = 5A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and

Другие транзисторы... 2SD1512 , 2SD1513 , 2SD1514 , 2SD1515 , 2SD1516 , 2SD1517 , 2SD1518 , 2SD1519 , MJE340 , 2SD1520 , 2SD1520L , 2SD1520S , 2SD1521 , 2SD1522 , 2SD1523 , 2SD1524 , 2SD1525 .

 

 
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