2SD152 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD152
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 155 °C
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO66
2SD152 Transistor Equivalent Substitute - Cross-Reference Search
2SD152 Datasheet (PDF)
2sd1526.pdf
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Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Request
2sd1525.pdf
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2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor) 2SD1525 High Current Switching Applications Unit: mm High collector current: IC = 30 A High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) Monolithic construction with built-in base-emitter shunt resistor. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol
2sd1527.pdf
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2SD1527Silicon NPN Triple DiffusedApplicationHigh voltage power amplifierOutlineTO-220AB1. Base2. Collector(Flange)13. Emitter23Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 1000 VCollector to emitter voltage VCEO 1000 VEmitter to base voltage VEBO 5VCollector current IC 0.5 ACollector power dissipation PC 1.8 W
2sd1521.pdf
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2SD1521Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-126 MOD231. Emitter ID2. Collector3. Base12 k 0.5 k23(Typ) (Typ)1Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 7VCollector current IC 1.5 ACollector peak current IC (peak) 3.0 ACollector
2sd1523.pdf
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INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1523DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 450V(Min)(BR)CEOHigh DC Current Gain: h = 500(Min) @ I = 8A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and
2sd1522.pdf
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INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1522DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 450V(Min)(BR)CEOHigh DC Current Gain: h = 500(Min) @ I = 5A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and
2sd1528.pdf
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isc Silicon NPN Power Transistor 2SD1528DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier,power switching appli
2sd1525.pdf
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isc Silicon NPN Darlington Power Transistor 2SD1525DESCRIPTIONHigh DC Current Gain: h = 1000(Min.)@ I = 20AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
2sd1524.pdf
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INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1524DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 450V(Min)(BR)CEOHigh DC Current Gain: h = 300(Min) @ I = 5A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .