2SD1566
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1566
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60
W
Tensión colector-base (Vcb): 150
V
Corriente del colector DC máxima (Ic): 10
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 9000
Paquete / Cubierta:
TO126
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2SD1566
Datasheet (PDF)
..1. Size:199K inchange semiconductor
2sd1566.pdf 
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1566DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 10ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching
8.4. Size:212K inchange semiconductor
2sd1563a.pdf
isc Silicon NPN Power Transistor 2SD1563ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1086AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
8.5. Size:210K inchange semiconductor
2sd1564.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1564DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CHigh DC Current Gain: h = 2000(Min) @I = 2AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audi
8.6. Size:210K inchange semiconductor
2sd1565.pdf
isc Silicon NPN Darlington Power Transistor 2SD1565DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = 2V, I = 2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers and low speedswitching applications.ABSOLUTE
8.7. Size:213K inchange semiconductor
2sd1562.pdf
isc Silicon NPN Power Transistor 2SD1562DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1085Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
8.8. Size:212K inchange semiconductor
2sd1563.pdf
isc Silicon NPN Power Transistor 2SD1563DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1086Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
8.9. Size:126K inchange semiconductor
2sd1562 2sd1562a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1562 2SD1562A DESCRIPTION With TO-220C package Complement to type 2SB1085/1085A High transition frequency APPLICATIONS For low freuqency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=25
Otros transistores... 2SD1559
, 2SD1559A
, 2SD156
, 2SD1562
, 2SD1562A
, 2SD1563
, 2SD1564
, 2SD1565
, TIP32C
, 2SD1567
, 2SD1568
, 2SD1569
, 2SD157
, 2SD1571
, 2SD1572
, 2SD1573
, 2SD1574
.
History: 2N5038G
