2SD1566 Todos los transistores

 

2SD1566 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1566

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 150 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 9000

Empaquetado / Estuche: TO126

Búsqueda de reemplazo de transistor bipolar 2SD1566

 

2SD1566 Datasheet (PDF)

0.1. 2sd1566.pdf Size:199K _inchange_semiconductor

2SD1566
2SD1566

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1566DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 10ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching

8.1. 2sd1565.pdf Size:106K _st

2SD1566
2SD1566

SD1565RF & MICROWAVE TRANSISTORSUHF PULSED APPLICATIONS.500 WATTS @ 250Sec PULSE WIDTH,10% DUTY CYCLE.REFRACTORY GOLD METALLIZATION.EMITTER BALLASTING AND LOWRESISTANCE FOR RELIABILITY ANDRUGGEDNESS.INFINITE VSWR CAPABILITY AT.400 x .500 4LFL (M102)SPECIFIED OPERATING CONDITIONShermetically sealed.INPUT MATCHED, COMMON BASEORDER CODE BRANDINGCONFIGURATIONSD1565

8.2. 2sd1563a.pdf Size:47K _rohm

2SD1566

 8.3. 2sd1562a.pdf Size:48K _rohm

2SD1566

8.4. 2sd1564.pdf Size:57K _no

2SD1566
2SD1566

 8.5. 2sd1565.pdf Size:210K _inchange_semiconductor

2SD1566
2SD1566

isc Silicon NPN Darlington Power Transistor 2SD1565DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = 2V, I = 2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers and low speedswitching applications.ABSOLUTE

8.6. 2sd1563a.pdf Size:212K _inchange_semiconductor

2SD1566
2SD1566

isc Silicon NPN Power Transistor 2SD1563ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1086AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

8.7. 2sd1563.pdf Size:212K _inchange_semiconductor

2SD1566
2SD1566

isc Silicon NPN Power Transistor 2SD1563DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1086Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

8.8. 2sd1564.pdf Size:210K _inchange_semiconductor

2SD1566
2SD1566

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1564DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CHigh DC Current Gain: h = 2000(Min) @I = 2AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audi

8.9. 2sd1562 2sd1562a.pdf Size:126K _inchange_semiconductor

2SD1566
2SD1566

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1562 2SD1562A DESCRIPTION With TO-220C package Complement to type 2SB1085/1085A High transition frequency APPLICATIONS For low freuqency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=25

8.10. 2sd1562.pdf Size:213K _inchange_semiconductor

2SD1566
2SD1566

isc Silicon NPN Power Transistor 2SD1562DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1085Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

Otros transistores... 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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