Справочник транзисторов. 2SD1566

 

Биполярный транзистор 2SD1566 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SD1566

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 60 W

Макcимально допустимое напряжение коллектор-база (Ucb): 150 V

Макcимальный постоянный ток коллектора (Ic): 10 A

Предельная температура PN-перехода (Tj): 150 °C

Статический коэффициент передачи тока (hfe): 9000

Корпус транзистора: TO126

Аналоги (замена) для 2SD1566

 

 

2SD1566 Datasheet (PDF)

4.1. 2sd1565.pdf Size:106K _st

2SD1566
2SD1566

SD1565 RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS .500 WATTS @ 250Sec PULSE WIDTH, 10% DUTY CYCLE .REFRACTORY GOLD METALLIZATION .EMITTER BALLASTING AND LOW RESISTANCE FOR RELIABILITY AND RUGGEDNESS .INFINITE VSWR CAPABILITY AT .400 x .500 4LFL (M102) SPECIFIED OPERATING CONDITIONS hermetically sealed .INPUT MATCHED, COMMON BASE ORDER CODE BRANDING CONFIGURATION SD1565 SD1

4.2. 2sd1562a.pdf Size:48K _rohm

2SD1566

 4.3. 2sd1563a.pdf Size:47K _rohm

2SD1566

4.4. 2sd1564.pdf Size:57K _no

2SD1566
2SD1566

 4.5. 2sd1562 2sd1562a.pdf Size:126K _inchange_semiconductor

2SD1566
2SD1566

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1562 2SD1562A DESCRIPTION Ў¤ With TO-220C package Ў¤ Complement to type 2SB1085/1085A Ў¤ High transition frequency APPLICATIONS Ў¤ For low freuqency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Tc=25Ў

4.6. 2sd1563.pdf Size:235K _inchange_semiconductor

2SD1566
2SD1566

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1563 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1086 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vo

4.7. 2sd1563a.pdf Size:125K _inchange_semiconductor

2SD1566
2SD1566

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SB1086A Ў¤ Wide area of safe operation Ў¤ High breakdown voltage :BVCEO=160V(min) APPLICATIONS Ў¤ For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SD1563A Ў¤ Abs

4.8. 2sd1565.pdf Size:125K _inchange_semiconductor

2SD1566
2SD1566

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1565 DESCRIPTION Ў¤ With TO-220 package Ў¤ High DC current gain Ў¤ DARLINGTON Ў¤ Complement type 2SB1087 APPLICATIONS Ў¤ For low frequency power amplifier and power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbo

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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Список транзисторов

Обновления

BJT: CHDTC114EKPT | CE1A3Q | 2SC6089 | 2SC4714 | 2SD1047C | 2SB817C | FW26025A1 | 2T665B9 | 2T665A9 | MJ13001A | HSC2682 | MRF660 | MP1620 | HLD133D | BFR360F | AV8050S | 3DD5027 | 3DD2901 | 3DD2102 | 3DD313 |

 

 

 

 

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