2SD1790 Todos los transistores

 ..1. Size:201K  inchange semiconductor
 2sd1790.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1790 DESCRIPTION Low Collector Saturation Voltage High DC Current Gain High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS

 8.1. Size:78K  sanyo
 2sd1799.pdf

Ordering number EN2110B NPN Epitaxial Planar Silicon Transistor 2SD1799 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2045B [2SD1799] 6.5 Features 2.3 5.0 0.5 4 High DC current gain (hFE 4000). Wide ASO. Large current capacity. Small and slim package making it

 8.2. Size:26K  sanken-ele
 2sd1796.pdf

Equivalent C circuit B Built-in Avalanche Diode for Surge Absorbing Darlington 2SD1796 (3k )(150 ) E Silicon NPN Triple Diffused Planar Transistor Application Driver for Solenoid, Relay and Motor and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol Symbol 2SD1796 Unit Conditions 2SD1796 Unit

 8.3. Size:203K  shindengen
 tp7l10 2sd1791.pdf

SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1791 Case ITO-220 (TP7L10) Unit mm 7A NPN RATINGS Absolute Maximum Ratings Conditions Item Symbol Ratings Unit Storage Temperature Tstg -55 +150 Junction Temperature Tj +150 Collector to Base Voltage VCBO 100 V Collector to Emitter Voltage VCEO 100 V Emitter to Base Voltage VEBO 7 V Collector Current DC I

 8.4. Size:259K  inchange semiconductor
 2sd1794.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1794 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 200V (Min.) High Switching Speed APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UN

 8.5. Size:201K  inchange semiconductor
 2sd1793.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1793 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V (Min.) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE M

 8.6. Size:116K  inchange semiconductor
 2sd1792.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1792 DESCRIPTION With ITO-220 package Switching power transistor DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter

 8.7. Size:85K  inchange semiconductor
 2sd1795.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1795 DESCRIPTION With ITO-220 package Switching power transistor DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter

 8.8. Size:200K  inchange semiconductor
 2sd1791.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1791 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V (Min.) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE M