2SD1790 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1790
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 15000
Noise Figure, dB: -
Package: ISO126
2SD1790 Transistor Equivalent Substitute - Cross-Reference Search
2SD1790 Datasheet (PDF)
2sd1790.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1790DESCRIPTIONLow Collector Saturation VoltageHigh DC Current GainHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.ABSOLUTE MAXIMUM RATINGS
2sd1799.pdf
Ordering number:EN2110BNPN Epitaxial Planar Silicon Transistor2SD1799Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2045B[2SD1799]6.5Features2.35.00.54 High DC current gain (hFE 4000). Wide ASO. Large current capacity. Small and slim package making it
2sd1796.pdf
Equivalent CcircuitBBuilt-in Avalanche Diode for Surge AbsorbingDarlington 2SD1796(3k)(150)ESilicon NPN Triple Diffused Planar TransistorApplication : Driver for Solenoid, Relay and Motor and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)SymbolSymbol 2SD1796 Unit Conditions 2SD1796 Unit
tp7l10 2sd1791.pdf
SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SD1791 Case : ITO-220(TP7L10) Unit : mm7A NPNRATINGSAbsolute Maximum Ratings ConditionsItem Symbol Ratings UnitStorage Temperature Tstg -55+150 Junction Temperature Tj +150 Collector to Base Voltage VCBO 100 VCollector to Emitter Voltage VCEO 100 VEmitter to Base VoltageVEBO 7 VCollector Current DC I
2sd1794.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1794 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 200V (Min.) High Switching Speed APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UN
2sd1793.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1793DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V (Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.ABSOLUTE M
2sd1792.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1792 DESCRIPTION With ITO-220 package Switching power transistor DARLINGTON PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter
2sd1795.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1795 DESCRIPTION With ITO-220 package Switching power transistor DARLINGTON PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter
2sd1791.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1791DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V (Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current switching industrial use.ABSOLUTE M
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
