2SD1790 - описание и поиск аналогов

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1790 DESCRIPTION Low Collector Saturation Voltage High DC Current Gain High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS

Ordering number EN2110B NPN Epitaxial Planar Silicon Transistor 2SD1799 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2045B [2SD1799] 6.5 Features 2.3 5.0 0.5 4 High DC current gain (hFE 4000). Wide ASO. Large current capacity. Small and slim package making it

Equivalent C circuit B Built-in Avalanche Diode for Surge Absorbing Darlington 2SD1796 (3k )(150 ) E Silicon NPN Triple Diffused Planar Transistor Application Driver for Solenoid, Relay and Motor and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol Symbol 2SD1796 Unit Conditions 2SD1796 Unit

SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1791 Case ITO-220 (TP7L10) Unit mm 7A NPN RATINGS Absolute Maximum Ratings Conditions Item Symbol Ratings Unit Storage Temperature Tstg -55 +150 Junction Temperature Tj +150 Collector to Base Voltage VCBO 100 V Collector to Emitter Voltage VCEO 100 V Emitter to Base Voltage VEBO 7 V Collector Current DC I

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1794 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 200V (Min.) High Switching Speed APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UN

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1793 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V (Min.) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE M

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1792 DESCRIPTION With ITO-220 package Switching power transistor DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1795 DESCRIPTION With ITO-220 package Switching power transistor DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1791 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V (Min.) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE M