2N23 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N2369/DSwitching Transistors2N2369NPN Silicon*2N2369ACOLLECTOR3*Motorola Preferred Device2BASE1EMITTER321MAXIMUM RATINGSRating Symbol Value UnitCASE 2203, STYLE 1CollectorEmitter Voltage VCEO 15 VdcTO18 (TO206AA)CollectorEmitter Voltage VCES 40 VdcCollectorBase Voltage

DISCRETE SEMICONDUCTORSDATA SHEETM3D1252N2369NPN switching transistor1997 Jun 20Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistor 2N2369FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 15 V).1 emitter2 baseAPPLICATIO

2N2369Awww.centralsemi.comNPN SILICON TRANSISTORDESCRIPTION:The CENTRAL SEMICONDUCTOR 2N2369A is an epitaxial planar NPN Silicon Transistor designed for ultra high speed saturated switching applications.MARKING: FULL PART NUMBERTO-18 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCES 40 VCollector-Emitter Voltage VC

2N2323Dimensions in mm (inches). 8.51 (0.34)9.40 (0.37)Bipolar NPNP Device in a 7.75 (0.305)8.51 (0.335)Hermetically sealed TO5 Metal Package. 6.10 (0.240)6.60 (0.260)0.89 (0.035)max.38.00 Bipolar NPNP Device. (1.5)0.41 (0.016)min.0.53 (0.021)dia.VCEO = 5.08 (0.200)IC = typ.2.54All Semelab hermetically sealed products 2(0.100)1 3 can be proc

RT2N23M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N23M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON HIGH SPEED SWITHCHING TRANSISTORS P2N2369TO-92Plastic PackageECBLOW POWER FOR HIGH SPEED SWITCHING APPLICATIONSABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCEOCollector Emitter Voltage 15 VVCBOCollector Base Voltage 40 VC

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company P2N2369ANPN SILICON HIGH SPEED SWITHCHING TRANSISTOR TO - 92 Plastic PackageECBLOW POWER AND HIGH SPEED SWITCHING APPLICATIONSABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCEOCollector Emitter Voltage 15 VVCBOCollector Base Voltage 4

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N23692N2369ATO-18APPLICATIONS2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications.ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 15 VCollec

TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 Devices Qualified Level 2N2369A 2N4449 JAN 2N2369AU 2N4449U JANTX 2N2369AUA 2N4449UA JANTXV 2N2369AUB 2N4449UB MAXIMUM RATINGS Ratings Symbol All UB All others Unit Collector-Emitter Voltage 20 15 Vdc VCEO Emitter-Base Voltage 6.0 4.5 Vdc VEBO Collector-Base Voltage 40 Vdc VCBO

Silicon Controlled Rectifier2N2323, 2N2324, 2N2326, 2N2328 & 2N23292N2323S, 2N2324S, 2N2326S, 2N2328S & 2N2329S2N2323A, 2N2324A, 2N2326A & 2N2328A, 2N2329A2N2323AS, 2N2324AS, 2N2326AS, 2N2328AS, 2N2329ASFeatures Available in JAN, JANTX and JANTXV per MIL-PRF-19500/276 TO-5 & TO-39 (TO-205AD) PackageMaximum Ratings2N2323, S/ 2N2324, S/ 2N2326, S/ 2N2328, S/ 2N2329, S/