2N23 Specs and Replacement
Type Designator: 2N23
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.08 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 33 pF
Forward Current Transfer Ratio (hFE), MIN: 19
Noise Figure, dB: -
Package: TO7
- BJT ⓘ Cross-Reference Search
2N23 datasheet
0.3. Size:291K motorola
2n2369 2n2369re.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N2369/D Switching Transistors 2N2369 NPN Silicon * 2N2369A COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 3 2 1 MAXIMUM RATINGS Rating Symbol Value Unit CASE 22 03, STYLE 1 Collector Emitter Voltage VCEO 15 Vdc TO 18 (TO 206AA) Collector Emitter Voltage VCES 40 Vdc Collector Base Voltage ... See More ⇒
0.4. Size:52K philips
2n2369.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2369 NPN switching transistor 1997 Jun 20 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistor 2N2369 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION Low voltage (max. 15 V). 1 emitter 2 base APPLICATIO... See More ⇒
0.5. Size:524K central
2n2369a.pdf
2N2369A www.centralsemi.com NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2369A is an epitaxial planar NPN Silicon Transistor designed for ultra high speed saturated switching applications. MARKING FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCES 40 V Collector-Emitter Voltage VC... See More ⇒
0.6. Size:10K semelab
2n2323.pdf
2N2323 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) Bipolar NPNP Device in a 7.75 (0.305) 8.51 (0.335) Hermetically sealed TO5 Metal Package. 6.10 (0.240) 6.60 (0.260) 0.89 (0.035)max. 38.00 Bipolar NPNP Device. (1.5) 0.41 (0.016) min. 0.53 (0.021) dia. VCEO = 5.08 (0.200) IC = typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can be proc... See More ⇒
0.7. Size:163K isahaya
rt2n23m.pdf
RT2N23M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT2N23M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=47k ) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui... See More ⇒
0.8. Size:248K cdil
p2n2369.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON HIGH SPEED SWITHCHING TRANSISTORS P2N2369 TO-92 Plastic Package E CB LOW POWER FOR HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 15 V VCBO Collector Base Voltage 40 V C... See More ⇒
0.9. Size:250K cdil
p2n2369a.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company P2N2369A NPN SILICON HIGH SPEED SWITHCHING TRANSISTOR TO - 92 Plastic Package E CB LOW POWER AND HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 15 V VCBO Collector Base Voltage 4... See More ⇒
0.10. Size:213K cdil
2n2369 a.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 15 V Collec... See More ⇒
0.11. Size:66K microsemi
2n4449 2n2369a.pdf
TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 Devices Qualified Level 2N2369A 2N4449 JAN 2N2369AU 2N4449U JANTX 2N2369AUA 2N4449UA JANTXV 2N2369AUB 2N4449UB MAXIMUM RATINGS Ratings Symbol All UB All others Unit Collector-Emitter Voltage 20 15 Vdc VCEO Emitter-Base Voltage 6.0 4.5 Vdc VEBO Collector-Base Voltage 40 Vdc VCBO ... See More ⇒
0.13. Size:212K aeroflex
2n2323 2n2324 2n2326 2n2328 2n2329.pdf
Silicon Controlled Rectifier 2N2323, 2N2324, 2N2326, 2N2328 & 2N2329 2N2323S, 2N2324S, 2N2326S, 2N2328S & 2N2329S 2N2323A, 2N2324A, 2N2326A & 2N2328A, 2N2329A 2N2323AS, 2N2324AS, 2N2326AS, 2N2328AS, 2N2329AS Features Available in JAN, JANTX and JANTXV per MIL-PRF-19500/276 TO-5 & TO-39 (TO-205AD) Package Maximum Ratings 2N2323, S/ 2N2324, S/ 2N2326, S/ 2N2328, S/ 2N2329, S/ ... See More ⇒
Detailed specifications: 2N2292, 2N2293, 2N2294, 2N2295, 2N2296, 2N2297, 2N2297-51, 2N2297S, 2SC2655, 2N230, 2N2303, 2N2303-46, 2N2303-51, 2N2304, 2N2305, 2N2306, 2N2306A
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