2SD1815T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1815T
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 180 MHz
Capacitancia de salida (Cc): 25 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: TO251
Búsqueda de reemplazo de transistor bipolar 2SD1815T
2SD1815T Datasheet (PDF)
2sb1215 2sd1815.pdf
Ordering number ENN2539B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1215/2SD1815 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2045B [2SB1215/2SD1815] 6.5 Features 2.3 5.0 0.5 4 Low collector-to-emitter saturation voltage. Exclle
2sb1215 2sd1815.pdf
Ordering number EN2539C 2SB1215/2SD1815 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 100V, 3A, Low VCE sat PNP NPN Single TP/TP-FA Applications Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features Low collector to emitter saturation voltage Excllent linearity of hFE Small-sized package permittin
2sd1815.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SD1815 TRANSISTOR (NPN) TO-252-2L FEATURES Low Collector-to-Emitter Saturation Voltage 1. BASE Excllent Linearity of hFE High fT 2. COLLECTOR Fast Switching Time 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise note) Symbol Parameter Value Unit VCBO Collector-
Otros transistores... 2SD1811 , 2SD1812 , 2SD1813 , 2SD1814 , 2SD1815 , 2SD1815Q , 2SD1815R , 2SD1815S , TIP120 , 2SD1816 , 2SD1816Q , 2SD1816R , 2SD1816S , 2SD1816T , 2SD1817 , 2SD1818 , 2SD1819 .
History: 2SD1229 | MRF654
Liste
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