2SD1815T Datasheet and Replacement

Ordering number:ENN2539BPNP/NPN Epitaxial Planar Silicon Transistors2SB1215/2SD1815High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1215/2SD1815]6.5Features2.35.00.54 Low collector-to-emitter saturation voltage. Exclle

Ordering number:EN2539BPNP/NPN Epitaxial Planar Silicon Transistors2SB1215/2SD1815High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1215/2SD1815]Features Low collector-to-emitter saturation voltage. Excllent linearity of hFE.

Ordering number : EN2539C2SB1215/2SD1815Bipolar Transistorhttp://onsemi.com() () ( ) ( )100V, 3A, Low VCE sat PNP NPN Single TP/TP-FAApplications Relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector to emitter saturation voltage Excllent linearity of hFE Small-sized package permittin

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SD1815 TRANSISTOR (NPN) TO-252-2L FEATURES Low Collector-to-Emitter Saturation Voltage 1. BASE Excllent Linearity of hFE High fT 2. COLLECTOR Fast Switching Time 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise note)Symbol Parameter Value UnitVCBO Collector-

SMD Type TransistorsNPN Transistors2SD1815TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low Collector-to-Emitter Saturation Voltage Fast Switching Speed0.127+0.1 High fT.0.80-0.1max Complementary to 2SB1215+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Rati

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1815DESCRIPTIONExcellent linearity of hFESmall and slim package making it easy to make 2SD1815/2SB1215-used set smallerLow collector-to-emitter saturation voltageHigh fTFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICAT