2SD1929 Todos los transistores

 

2SD1929 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1929

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.2 W

Tensión colector-base (Vcb): 60 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 5000

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar 2SD1929

 

2SD1929 Datasheet (PDF)

4.1. 2sd1922.pdf Size:33K _hitachi

2SD1929
2SD1929

2SD1922 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-92MOD 2 3 ID 1. Emitter 2. Collector 3. Base 1 3 2 1 2SD1922 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 6V Collector current IC 0.8 A Collector peak current ic (peak)

5.1. 2sd1947a.pdf Size:231K _toshiba

2SD1929
2SD1929



5.2. 2sd1947.pdf Size:221K _toshiba

2SD1929
2SD1929



 5.3. 2sd1903.pdf Size:131K _sanyo

2SD1929
2SD1929

Ordering number:EN2263A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1267/2SD1903 30V/8A High-Current Switching Applications Applications Package Dimensions · Suitable for relay drivers, high-speed inverters, unit:mm converters and other general high-current switching. 2049B [2SB1267/2SD1903] Features · Suitable for sets whose height is restricted. · Low collector to emitte

5.4. 2sd1914.pdf Size:595K _sanyo

2SD1929
2SD1929

 This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Res

 5.5. 2sd1936.pdf Size:190K _sanyo

2SD1929
2SD1929

Ordering number:EN2468 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1296/2SD1936 AF Amplifier Applications Applications Package Dimensions · AF power amplifier, medium-speed switching, small- unit:mm sized motor drivers. 2033 [2SB1296/2SD1936] Features · Large current capacity. · Low collector to emitter saturation voltage. · Wide ASO. B : Base C : Collector ( ) : 2SB

5.6. 2sb1274 2sd1913.pdf Size:34K _sanyo

2SD1929
2SD1929

Ordering number : ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications Package Dimensions • General power amplifier. unit : mm 2041A [2SB1274/2SD1913] 4.5 10.0 2.8 Features 3.2 • Wide ASO (Adoption of MBIT process). • Low saturation voltage. • High reliability. • High br

5.7. 2sd1953.pdf Size:74K _sanyo

2SD1929
2SD1929

Ordering number:EN2507 NPN Epitaxial Planar Silicon Transistor 2SD1953 120V/1.5A Driver Applications Applications Package Dimensions · Motor drivers, printer hammer drivers, relay drivers. unit:mm 2009A Features [2SD1953] 8.0 2.7 · Darlington connection. 4.0 · High DC current gain. · Low dependence of DC current gain on temperature. 3.0 1.6 0.8 0.8 0.6 0.5 1 : Emitte

5.8. 2sd1998.pdf Size:92K _sanyo

2SD1929
2SD1929

Ordering number:EN3130 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1324/2SD1998 Compact Motor Driver Applications Features Package Dimensions · Low saturation voltage. unit:mm · Contains diode between collector and emitter. 2038 · Contains bias resistance between collector and [2SB1324/2SD1998] emitter. · Large current capacity. · Small-sized package making it easy to

5.9. 2sd1908.pdf Size:85K _sanyo

2SD1929
2SD1929

Ordering number:EN3971 NPN Epitaxial Planar Silicon Transistor 2SD1908 CRT Display Horizontal Deflection Output Applications Features Package Dimensions · Fast switching speed. unit:mm · Especially suited for use in high-definition CRT 2049C display : VCC=6 to 12V. [2SD1908] · Wide ASO and highly resistant to breakdown. 10.2 4.5 1.3 1.2 0.8 0.4 1 2 3 1 : Base 2 : Coll

5.10. 2sd1997.pdf Size:86K _sanyo

2SD1929
2SD1929

Ordering number:EN3129 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1323/2SD1997 Compact Motor Driver Applications Features Package Dimensions · Contains input resistance (R1), base-to-emitter unit:mm resistance (RBE). 2038 · Contains diode between collector and emitter. [2SB1323/2SD1997] · Low saturation voltage. · Large current capacity. · Small-sized package making

5.11. 2sd1902.pdf Size:45K _sanyo

2SD1929
2SD1929

Ordering number:EN2538A PNP/NPN Triple Diffused Planar Type Silicon Transistors 2SB1266/2SD1902 AF Power Amplifier Applications Features Package Dimensions · Suitable for sets whose heighit is restricted. unit:mm · Wide ASO (adoption of MBIT process). 2049B · High reliability. [2SB1266/2SD1902] E : Emitter C : Collector ( ) : 2SB1266 B : Base SANYO : TO-220MF Specification

5.12. 2sd1958.pdf Size:85K _sanyo

2SD1929
2SD1929

Ordering number:EN2549A NPN Triple Diffused Planar Silicon Transistor 2SD1958 TV Horizontal Deflection Output High-Current Switching Applications Features Package Dimensions · Excellent tf permitting efficient drive with less unit:mm internal dissipation. 2041A [2SD1958] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Base 2.55 2.55 2 : Collector 3 : Emitter 2.55 2.55

5.13. 2sd1935.pdf Size:133K _sanyo

2SD1929
2SD1929

Ordering number:EN2516 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1295/2SD1935 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions · AF power amplifier, medium-speed switching, small- unit:mm sized motor drivers. 2018A [2SB1295/2SD1935] Features · Large current capacity. · Low collector to emitter saturation voltage. · Very small-size

5.14. 2sd1999.pdf Size:22K _sanyo

2SD1929
2SD1929

Ordering number:EN3175 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1325/2SD1999 Compact Motor Driver Applications Features Package Dimensions · Low saturation voltage. unit:mm · Contains diode between collector and emitter. 2038 · Contains bias resistance between base and emitter. [2SB1325/2SD1999] · Large current capacity. · Small-sized package making it easy to provi

5.15. 2sd1905.pdf Size:111K _sanyo

2SD1929
2SD1929

Ordering number:EN2265A PNP/NPN Epitaxial Planar Type Silicon Transistors 2SB1269/2SD1905 High-Current Switching Applications Applications Package Dimensions · Suitable for relay drivers, high-speed inverters, unit:mm converters, and other general high-current switching 2049B applications. [2SB1269/2SD1905] Features · Suitable for sets whose height is restricted. · Low collec

5.16. 2sd1904.pdf Size:166K _sanyo

2SD1929
2SD1929

Ordering number:EN2264B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1268/2SD1904 High-Current Switching Applicatons Applications Package Dimensions · Suitable for relay drivers, high-speed inverters, unit:mm converters, and other general high-current switching 2049B applications. [2SB1268/2SD1904] Features · Suitable for sets whose height is restricted. · Low collector to

5.17. 2sd1906.pdf Size:156K _sanyo

2SD1929
2SD1929

Ordering number:EN2266A PNP/NPN Epitaxial Planar Type Silicon Transistors 2SB1270/2SD1906 High-Current Switching Applications Applications Package Dimensions · Suitable for relay drivers, high-speed inverters, unit:mm converters, and other general high-current switching 2049B applications. [2SB1270/2SD1906] Features · Suitable for sets whose height is restricted. · Low collec

5.18. 2sd1981.pdf Size:71K _sanyo

2SD1929
2SD1929

Ordering number:EN2534 NPN Epitaxial Planar Silicon Darlington Transistor 2SD1981 Driver Applications Applications Package Dimensions · Motor drivers, printer hammer drivers, relay drivers, unit:mm voltage regulator control. 2006B [2SD1981] 6.0 Features 4.7 5.0 · Darlington connection (on-chip bias resistance, damper diode). · High DC current gain. · Low dependence of D

5.19. 2sd1912.pdf Size:701K _sanyo

2SD1929
2SD1929

 This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Res

5.20. 2sd1940.pdf Size:83K _sanyo

2SD1929
2SD1929

Ordering number:EN2533 NPN Epitaxial Planar Silicon Transistor 2SD1940 85V/6A, AF 25 to 30W Output Applications Features Package Dimensions · Micaless package facilitating mounting. unit:mm · Wide ASO. 2041A [2SD1940] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Base 2.55 2.55 2 : Collector 3 : Emitter 2.55 2.55 SANYO : TO-220ML Specifications Absolute Maximum

5.21. 2sd1907.pdf Size:165K _sanyo

2SD1929
2SD1929

Ordering number:EN2267B PNP/NPN Epitaxial Planar Type Silicon Transistors 2SB1271/2SD1907 High-Current Switching Applications Applications Package Dimensions · Suitable for relay drivers, high-speed inverters, unit:mm converters, and other general high-current switching 2049B applications. [2SB1271/2SD1907] Features · Suitable for sets whose height is restricted. · Low collec

5.22. 2sd1939.pdf Size:124K _nec

2SD1929
2SD1929



5.23. 2sd1950.pdf Size:255K _nec

2SD1929
2SD1929



5.24. 2sd2211 2sd1918 2sd1857a.pdf Size:68K _rohm

2SD1929
2SD1929

2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units : mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SD2211 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency.(fT = 80MHZ) (2) 4) Complements the 2SB1275 / 2SB1236A. (3) (1) Base(Gate)

5.25. 2sd1980.pdf Size:128K _rohm

2SD1929
2SD1929

Power Transistor (100V, 2A) 2SD1980 Features Dimensions (Unit : mm) 1) Darlington connection for high DC current gain. 2SD1980 2) Built-in resistor between base and emitter. 6.5 5.1 2.3 3) Built-in damper diode. 0.5 4) Complements the 2SB1316. inner circuit C 0.75 0.65 B 0.9 2.3 2.3 (1) (2) (3) 0.5 1.0 R1 R2 (1) Base E (2) Collector R1 3.5kΩ B : Base

5.26. 2sb1275 2sb1236a 2sb1569a 2sb1186a 2sd2211 2sd1918 2sd1857a 2sd2400a 2sd1763a.pdf Size:48K _rohm

2SD1929

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A Transistors Transistors 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A (96-612-A58) (96-744-C58) 277

5.27. 2sd1957.pdf Size:40K _rohm

2SD1929

2SD1957 Transistors Transistors 2SD2061 (94L-919–D301) (94L-1016-D304) 315

5.28. 2sb1308 2sd1963.pdf Size:47K _rohm

2SD1929
2SD1929

2SB1308 Transistors Transistors 2SD1963 (94S-166-B204) (94S-342-D204) 290 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference o

5.29. 2sd2195 2sd1980 2sd1867 2sd2398.pdf Size:66K _rohm

2SD1929

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor (100V , 2A) 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units : mm) 1) Darlington connection for high DC current gain. 2SD2195 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) (2) 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. (3) (1) Base(Gate)

5.30. 2sd1949fra 2sd1484kfra.pdf Size:977K _rohm

2SD1929
2SD1929

Data Sheet AEC-Q101 Qualified Medium Power Transistor (50V,0.5A) 2SD1949FRA / 2SD1484KFRA 2SD1949 / 2SD1484K Features Dimensions (Unit : mm) 1) High current.(IC=0.5A) UMT3 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. (SC-70) (1) Emitter (2) Bace (3) Collector Absolute maximum rationgs (Ta=25 C) SMT3 (SC-59) Parameter Symbol Limits Unit

5.31. 2sd1949 2sd1949 2sd1484k.pdf Size:106K _rohm

2SD1929
2SD1929

Data Sheet Medium Power Transistor (50V,0.5A) M e d i u m P o w e r T r a n s i s t o r ( 5 0 V , 0 . 5 A ) 2SD1949 / 2SD1484K 2 S D 1 9 4 9 2 S D 1 4 8 4 K Features Dimensions (Unit : mm) 1) High current.(IC=0.5A) UMT3 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. (SC-70) (1) Emitter (2) Bace (3) C

5.32. 2sd1944.pdf Size:29K _rohm

2SD1929



5.33. 2sd1918.pdf Size:143K _rohm

2SD1929
2SD1929

Power Transistor (160V , 1.5A) 2SD1918 / 2SD1857A Features Dimensions (Unit : mm) 1) High breakdown voltage.(BVCEO=160V) 2SD1918 2) Low collector output capacitance. 5.5 1.5 (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 0.9 4) Complements the 2SB1275. C0.5 0.8Min. 1.5 Absolute maximum ratings (Ta = 25C) 2.5 9.5 Parameter Symbol Limits Unit

5.34. 2sd1992.pdf Size:67K _panasonic

2SD1929
2SD1929

Transistors 2SD1992A Silicon NPN epitaxial planer type Unit: mm 6.9±0.1 1.05 2.5±0.1 For general amplification ±0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SB1321A Features 0.65 max. • Low collector to emitter saturation voltage VCE(sat) • Allowing supply with the radial taping +0.1 0.45-0.05 2.5±0.5 2.5±0.5 Absolute Maximum Ratings Ta = 25°C 1 2 3 Parameter Symbol

5.35. 2sd1938.pdf Size:88K _panasonic

2SD1929
2SD1929

Transistors 2SD1938(F) Silicon NPN epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 For muting 0.16+0.10 –0.06 3 For DC-DC converter ■ Features • Low ON resistance Ron 1 2 • High forward current transfer ratio hFE (0.95) (0.95) • Mini type package, allowing downsizing of the equipment and 1.9±0.1 2.90+0.20 automatic insertion t

5.36. 2sd1992a e.pdf Size:52K _panasonic

2SD1929
2SD1929

Transistor 2SD1992A Silicon NPN epitaxial planer type For low-frequency power strengthening and drive Unit: mm Complementary to 2SB1321A 6.9± 0.1 1.05 2.5± 0.1 ± 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. +0.1 0.45–0.05 Absolute Maximum Ratings (Ta=25˚C) 2.5± 0.5 2.5± 0.5 Par

5.37. 2sd1996.pdf Size:43K _panasonic

2SD1929
2SD1929

Transistor 2SD1996 Silicon NPN epitaxial planer type Unit: mm For low-voltage output amplification 6.9± 0.1 1.05 2.5± 0.1 For muting ± 0.05 (1.45) 0.7 4.0 0.8 For DC-DC converter Features 0.65 max. Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. +0.1 0.45–0.05 Allowing supply with the radial taping. 2.

5.38. 2sd1964.pdf Size:55K _panasonic

2SD1929
2SD1929

Power Transistors 2SD1964 Silicon NPN epitaxial planar type For power switching Unit: mm Features 10.0± 0.2 4.2± 0.2 5.5± 0.2 2.7± 0.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC φ 3.1± 0.1 Full-pack package which can be installed to the heat sink with one screw Absolute Maxi

5.39. 2sd1979.pdf Size:37K _panasonic

2SD1929
2SD1929

Transistor 2SD1979 Silicon NPN epitaxial planer type For low-voltage output amplification Unit: mm For muting For DC-DC converter 2.1± 0.1 0.425 1.25± 0.1 0.425 Features 1 Low ON resistance Ron. High foward current transfer ratio hFE. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. Absol

5.40. 2sd1991.pdf Size:49K _panasonic

2SD1929
2SD1929

Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Unit: mm Complementary to 2SB1320A 6.9± 0.1 1.05 2.5± 0.1 ± 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.45–0.05 2.5± 0.5 2.5± 0.5 Absolute Maximum Rati

5.41. 2sd1995.pdf Size:40K _panasonic

2SD1929
2SD1929

Transistor 2SD1995 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9± 0.1 1.05 2.5± 0.1 ± 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. High emitter to base voltage VEBO. Allowing supply with the radial taping. +0.1 0.45–0.05 2.5± 0.5 2.5± 0.5 Absolut

5.42. 2sd1979 e.pdf Size:42K _panasonic

2SD1929
2SD1929

Transistor 2SD1979 Silicon NPN epitaxial planer type For low-voltage output amplification Unit: mm For muting For DC-DC converter 2.1± 0.1 0.425 1.25± 0.1 0.425 Features 1 Low ON resistance Ron. High foward current transfer ratio hFE. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. Absol

5.43. 2sd1985.pdf Size:47K _panasonic

2SD1929
2SD1929

Power Transistors 2SD1985, 2SD1985A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1393 and 2SB1393A Unit: mm Features High forward current transfer ratio hFE which has satisfactory linearity 10.0± 0.2 4.2± 0.2 5.5± 0.2 2.7± 0.2 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink wi

5.44. 2sd1934 e.pdf Size:40K _panasonic

2SD1929
2SD1929

Transistor 2SD1934 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm For stroboscope 5.0± 0.2 4.0± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Allowing supply with the radial taping. 0.7± 0.1 Absolute Maximum Ratings (Ta=25˚C) Paramete

5.45. 2sd1994.pdf Size:69K _panasonic

2SD1929
2SD1929

Transistors 2SD1994A Silicon NPN epitaxial planer type Unit: mm 2.5±0.1 1.05 For low-frequency power amplification and driver amplification 6.9±0.1 ±0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SB1322A Features 0.65 max. • Low collector to emitter saturation voltage VCE(sat) • Output of 2 W to 3 W is obtained with a complementary pair with 2SB1322A +0.1 0.45-0.05 • Allo

5.46. 2sd1993 e.pdf Size:45K _panasonic

2SD1929
2SD1929

Transistor 2SD1993 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm 6.9± 0.1 1.05 2.5± 0.1 ± 0.05 (1.45) 0.7 4.0 0.8 Features Low noise voltage NV. High foward current transfer ratio hFE. 0.65 max. Allowing supply with the radial taping. +0.1 0.45–0.05 2.5± 0.5 2.5± 0.5 Absolute Maximum Ratings (Ta=25˚C) 1 2 3 Parameter Symbol

5.47. 2sd1993.pdf Size:40K _panasonic

2SD1929
2SD1929

Transistor 2SD1993 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm 6.9± 0.1 1.05 2.5± 0.1 ± 0.05 (1.45) 0.7 4.0 0.8 Features Low noise voltage NV. High foward current transfer ratio hFE. 0.65 max. Allowing supply with the radial taping. +0.1 0.45–0.05 2.5± 0.5 2.5± 0.5 Absolute Maximum Ratings (Ta=25˚C) 1 2 3 Parameter Symbol

5.48. 2sd1994a e.pdf Size:54K _panasonic

2SD1929
2SD1929

Transistor 2SD1994A Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Unit: mm Complementary to 2SB1322A 2.5± 0.1 1.05 6.9± 0.1 ± 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Output of 2 to 3W is obtained with a complementary pair with 0.65 max. 2SB1322A. Allowing supply with the radial ta

5.49. 2sd1995 e.pdf Size:45K _panasonic

2SD1929
2SD1929

Transistor 2SD1995 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9± 0.1 1.05 2.5± 0.1 ± 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. High emitter to base voltage VEBO. Allowing supply with the radial taping. +0.1 0.45–0.05 2.5± 0.5 2.5± 0.5 Absolut

5.50. 2sd1937 e.pdf Size:41K _panasonic

2SD1929
2SD1929

Transistor 2SD1937 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm Complementary to 2SB1297 5.0± 0.2 4.0± 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier. Allowing supply with the radial taping. 0.7± 0.1 Absolute Maximum Ratings (Ta=25˚C) +0.15 +0.15 0.45 –0.1 0.45

5.51. 2sd1975.pdf Size:54K _panasonic

2SD1929
2SD1929

Power Transistors 2SD1975, 2SD1975A Silicon NPN triple diffusion planar type For high power amplification Unit: mm Complementary to 2SB1317 and 2SB1317A φ 3.3± 0.2 20.0± 0.5 5.0± 0.3 3.0 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics Wide area of safe operation (ASO) 1.5 High transition frequency fT Optimum for the output stage o

5.52. 2sd1934.pdf Size:36K _panasonic

2SD1929
2SD1929

Transistor 2SD1934 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm For stroboscope 5.0± 0.2 4.0± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Allowing supply with the radial taping. 0.7± 0.1 Absolute Maximum Ratings (Ta=25˚C) Paramete

5.53. 2sd1996 e.pdf Size:49K _panasonic

2SD1929
2SD1929

Transistor 2SD1996 Silicon NPN epitaxial planer type Unit: mm For low-voltage output amplification 6.9± 0.1 1.05 2.5± 0.1 For muting ± 0.05 (1.45) 0.7 4.0 0.8 For DC-DC converter Features 0.65 max. Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. +0.1 0.45–0.05 Allowing supply with the radial taping. 2.

5.54. 2sd1991a e.pdf Size:54K _panasonic

2SD1929
2SD1929

Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Unit: mm Complementary to 2SB1320A 6.9± 0.1 1.05 2.5± 0.1 ± 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.45–0.05 2.5± 0.5 2.5± 0.5 Absolute Maximum Rati

5.55. 2sd1978.pdf Size:32K _hitachi

2SD1929
2SD1929

2SD1978 Silicon NPN Epitaxial, Darlington Application • Low frequency power amplifier • Complementary pair with 2SB1387 Outline TO-92MOD 2 3 ID 1. Emitter 2 kΩ 0.5 kΩ 2. Collector (Typ) (Typ) 3. Base 1 3 2 1 2SD1978 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to

5.56. 2sd1970.pdf Size:32K _hitachi

2SD1929
2SD1929

2SD1970 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1. Emitter ID 2. Collector 3. Base 1 32 kΩ 0.4 kΩ 2 3 (Typ) (Typ) 1 2SD1970 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 24 V Collector to emitter voltage VCEO 24 V Emitter to base voltage VEBO 7V Collector current IC 2A Col

5.57. 2sd1976.pdf Size:36K _hitachi

2SD1929
2SD1929

2SD1976 Silicon NPN Triple Diffused Application High voltage switching, igniter Feature • Built-in High voltage zener diode (300 V) • High Speed switching Outline TO-220AB 2 1 1. Base ID 2. Collector (Flange) 1 3. Emitter 1.6 kΩ 160 Ω 2 3 (Typ) (Typ) 3 2SD1976 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO 300 V Col

5.58. 2sd1974.pdf Size:34K _hitachi

2SD1929
2SD1929

2SD1974 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 2, 4 1 2 3 1 ID 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 3 2SD1974 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 6V Collector current IC 0.8 A Collect

5.59. 2sd1977.pdf Size:32K _no

2SD1929



5.60. 2sd1910.pdf Size:100K _wingshing

2SD1929

2SD1910 Silicon Diffused Power Transistor GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA TO-3PFM SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 1500 V Co

5.61. 2sd1911.pdf Size:100K _wingshing

2SD1929

Silicon Diffused Power Transistor 2SD1911 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA TO-3PFM SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 1500 V C

5.62. 2sd1991a.pdf Size:355K _jiangsu

2SD1929

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SD1991A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High Foward Current Transfer Ratio hFE 3. BASE Low Collector to Emitter Saturation Voltage VCE(sat). Allowing Supply with the Radial Taping. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

5.63. 2sd1994a.pdf Size:458K _jiangsu

2SD1929
2SD1929

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SD1994A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR Low Collector to Emitter Saturation Voltage 3. BASE Complementary Pair with 2SB1322A Allowing Supply with the Radial Taping MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Co

5.64. 2sd1991a.pdf Size:251K _lge

2SD1929
2SD1929

 2SD1991A(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V

5.65. 2sd1936m.pdf Size:822K _blue-rocket-elect

2SD1929
2SD1929

2SD1936M(BR3DG1936M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 大电流容量,低饱和压降,宽阔的安全工作区 Large current capacity ,low VCE sat) ,wide ASO. ( 用途 / Applications 用于音频放大,中速开关,小型驱动电动机

5.66. 2sd1938.pdf Size:935K _kexin

2SD1929
2SD1929

SMD Type Transistors NPN Transistors 2SD1938 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=300mA ● Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Coll

5.67. 2sd1950.pdf Size:1305K _kexin

2SD1929
2SD1929

SMD Type Transistors NPN Transistors 2SD1950 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=2A ● Collector Emitter Voltage VCEO=25V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO

5.68. 2sd1998.pdf Size:989K _kexin

2SD1929
2SD1929

SMD Type Transistors NPN Transistors 2SD1998 1.70 0.1 ■ Features ● Low saturation voltage. ● Large current capacity. Collector 0.42 0.1 0.46 0.1 ● Complementary to 2SB1324 Base 1.Base 2.Collector RBE 3.Emitter Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emi

5.69. 2sd1997.pdf Size:989K _kexin

2SD1929
2SD1929

SMD Type Transistors NPN Transistors 2SD1997 1.70 0.1 ■ Features ● Low saturation voltage. ● Large current capacity. ● Complementary to 2SB1323 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 6 Col

5.70. 2sd1902.pdf Size:1098K _kexin

2SD1929
2SD1929

SMD Type Transistors NPN Transistors 2SD1902 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features ● High reliablity ● Complementary to 2SB1266 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltag

5.71. 2sd1935.pdf Size:1025K _kexin

2SD1929
2SD1929

SMD Type Transistors NPN Transistors 2SD1935 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 3 ● Large current capacity. ● Low collector to emitter saturation voltage. ● Complimentary to 2SB1295 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Bas

5.72. 2sd1999.pdf Size:583K _kexin

2SD1929
2SD1929

SMD Type Transistors NPN Transistors 2SD1999 1.70 0.1 ■ Features ● Low saturation voltage. ● Large current capacity. Collector 0.42 0.1 ● Complementary to 2SB1325 0.46 0.1 Base 1.Base 2.Collector RBE 3.Emitter Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitte

5.73. 2sd1974.pdf Size:945K _kexin

2SD1929
2SD1929

SMD Type Transistors NPN Transistors 2SD1974 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=0.8A C ● Collector Emitter Voltage VCEO=25V 0.42 0.1 0.46 0.1 B ID 1.Base 2.Collector 3.Emitter E ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 25 V Emitter - Ba

5.74. 2sd1918.pdf Size:1071K _kexin

2SD1929
2SD1929

SMD Type Transistors NPN Transistors 2SD1918 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features ● High breakdown voltage. ● Low collector output capacitance. 0.127 ● High transition frequency +0.1 0.80-0.1 max ● Complementary to 2SB1275 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter ■ Absolute Max

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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Recientemente añadidas las descripciónes de los transistores:

BJT: YZ21D | Q3-2 | 3DD13005MD-O-Z-N-C | 3DD13005MD-O-HF-N-B | ST2310DHI | ST2310HI | LM4158D | HLD128D | 9015M-D | 9015M-C | 9015M-B | 9014M-D | 9014M-C | 9014M-B | 2T837E | 2T837D | 2T837G | 2T837V | 2T837B | SS8550-J | SS8550-H

 

 

 
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