All Transistors. 2SD1929 Datasheet

 

2SD1929 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1929

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1.2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 5000

Noise Figure, dB: -

Package: TO92

2SD1929 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1929 Datasheet (PDF)

8.1. 2sd1922.pdf Size:33K _hitachi

2SD1929
2SD1929

2SD1922Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-92MOD23ID1. Emitter2. Collector3. Base13212SD1922Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 25 VEmitter to base voltage VEBO 6VCollector current IC 0.8 ACollector peak current ic (peak)

8.2. 2sd1928.pdf Size:212K _inchange_semiconductor

2SD1929
2SD1929

isc Silicon NPN Darlington Power Transistor 2SD1928DESCRIPTIONCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 4AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed switching industrial use.ABSOLUTE

 8.3. 2sd1923.pdf Size:202K _inchange_semiconductor

2SD1929
2SD1929

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1923DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 2A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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