2SD1929 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1929
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 5000
Package: TO92
2SD1929 Transistor Equivalent Substitute - Cross-Reference Search
2SD1929 Datasheet (PDF)
8.1. 2sd1922.pdf 
Size:33K _hitachi
2SD1922Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-92MOD23ID1. Emitter2. Collector3. Base13212SD1922Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 25 VEmitter to base voltage VEBO 6VCollector current IC 0.8 ACollector peak current ic (peak)
8.2. 2sd1928.pdf Size:212K _inchange_semiconductor
isc Silicon NPN Darlington Power Transistor 2SD1928DESCRIPTIONCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 4AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed switching industrial use.ABSOLUTE
8.3. 2sd1923.pdf Size:202K _inchange_semiconductor
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1923DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 2A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
