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2SD1991 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD1991
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.4 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150(typ) MHz
   Capacitancia de salida (Cc): 3.5 pF
   Ganancia de corriente contínua (hfe): 160
   Paquete / Cubierta: MT1

 Búsqueda de reemplazo de transistor bipolar 2SD1991

 

2SD1991 Datasheet (PDF)

 ..1. Size:332K  1
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2SD1991

Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Mainten

 ..2. Size:49K  panasonic
2sd1991.pdf pdf_icon

2SD1991

Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1320A 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Rati

 0.1. Size:54K  panasonic
2sd1991a e.pdf pdf_icon

2SD1991

Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1320A 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Rati

 0.2. Size:355K  jiangsu
2sd1991a.pdf pdf_icon

2SD1991

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SD1991A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High Foward Current Transfer Ratio hFE 3. BASE Low Collector to Emitter Saturation Voltage VCE(sat). Allowing Supply with the Radial Taping. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter

Otros transistores... 2SD1986 , 2SD1987 , 2SD1988 , 2SD1989 , 2SD198A , 2SD198P , 2SD199 , 2SD1990 , 2SA1837 , 2SD1992A , 2SD1993 , 2SD1994 , 2SD1995 , 2SD1996 , 2SD1997 , 2SD1998 , 2SD1999 .

History: 2SA1878 | 2SC3014

 

 
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