2SD1991 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1991  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.4 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 150 typ MHz

Capacitancia de salida (Cc): 3.5 pF

Ganancia de corriente contínua (hFE): 160

Encapsulados: MT1

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2SD1991 datasheet

 ..1. Size:332K  1
 2sd1991 2sd1991a.pdf pdf_icon

2SD1991

Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Mainten

 ..2. Size:49K  panasonic
 2sd1991.pdf pdf_icon

2SD1991

Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1320A 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Rati

 0.1. Size:54K  panasonic
 2sd1991a e.pdf pdf_icon

2SD1991

Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1320A 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Rati

 0.2. Size:355K  jiangsu
 2sd1991a.pdf pdf_icon

2SD1991

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SD1991A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High Foward Current Transfer Ratio hFE 3. BASE Low Collector to Emitter Saturation Voltage VCE(sat). Allowing Supply with the Radial Taping. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter

MOSTRAR MÁS

Otros transistores... 2SD1986, 2SD1987, 2SD1988, 2SD1989, 2SD198A, 2SD198P, 2SD199, 2SD1990, 2SA1837, 2SD1992A, 2SD1993, 2SD1994, 2SD1995, 2SD1996, 2SD1997, 2SD1998, 2SD1999