2SD1991
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1991
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 25
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150(typ)
MHz
Capacitancia de salida (Cc): 3.5
pF
Ganancia de corriente contínua (hfe): 160
Paquete / Cubierta:
MT1
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2SD1991
Datasheet (PDF)
..1. Size:332K 1
2sd1991 2sd1991a.pdf
Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Mainten
..2. Size:49K panasonic
2sd1991.pdf
Transistor2SD1991ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1320A6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Rati
0.1. Size:54K panasonic
2sd1991a e.pdf
Transistor2SD1991ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1320A6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Rati
0.2. Size:355K jiangsu
2sd1991a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SD1991A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High Foward Current Transfer Ratio hFE 3. BASE Low Collector to Emitter Saturation Voltage VCE(sat). Allowing Supply with the Radial Taping. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter
0.3. Size:251K lge
2sd1991a.pdf
2SD1991A(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 V
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