All Transistors. 2SD1991 Datasheet

 

2SD1991 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD1991
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150(typ) MHz
   Collector Capacitance (Cc): 3.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: MT1

 2SD1991 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD1991 Datasheet (PDF)

 ..1. Size:332K  1
2sd1991 2sd1991a.pdf

2SD1991
2SD1991

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Mainten

 ..2. Size:49K  panasonic
2sd1991.pdf

2SD1991
2SD1991

Transistor2SD1991ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1320A6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Rati

 0.1. Size:54K  panasonic
2sd1991a e.pdf

2SD1991
2SD1991

Transistor2SD1991ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1320A6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Rati

 0.2. Size:355K  jiangsu
2sd1991a.pdf

2SD1991

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SD1991A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High Foward Current Transfer Ratio hFE 3. BASE Low Collector to Emitter Saturation Voltage VCE(sat). Allowing Supply with the Radial Taping. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter

 0.3. Size:251K  lge
2sd1991a.pdf

2SD1991
2SD1991

2SD1991A(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 V

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: KT682A-2 | BUF660 | D11C1536 | BF178

 

 
Back to Top