2SD243 Todos los transistores

 0.1. Size:82K  jmnic
 2sd2439.pdf

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2439 DESCRIPTION With TO-3PML package Complement to type 2SB1588 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE U

 0.2. Size:82K  jmnic
 2sd2438.pdf

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2438 DESCRIPTION With TO-3PML package Complement to type 2SB1587 APPLICATIONS Audio, Series Regulator and General Purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Tc=25 ) SYMBOL PARAMETER CONDITION

 0.3. Size:25K  sanken-ele
 2sd2439.pdf

Equivalent circuit C B Darlington 2SD2439 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1588) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM100(TO3PF) Symbol 2SD2439 Symbol Conditions 2SD2439 Unit Unit 0.2 0.2 5.5 15.6 VCBO 160 ICBO VCB=1

 0.4. Size:25K  sanken-ele
 2sd2438.pdf

C Equivalent circuit B Darlington 2SD2438 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1587) Application Audio, Series Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SD2438 Unit Symbol Conditions 2SD2438 Unit 0.2 0.2 5.5 15.6 VCBO 160 V ICBO VC

 0.5. Size:208K  inchange semiconductor
 2sd2439.pdf

isc Silicon NPN Darlington Power Transistor 2SD2439 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 7A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 7A, I = 7mA) CE(sat) C B Complement to Type 2SB1588 Minimum Lot-to-Lot variations for robust device performance and reliable op

 0.6. Size:208K  inchange semiconductor
 2sd2438.pdf

isc Silicon NPN Darlington Power Transistor 2SD2438 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 6A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 6A, I = 6mA) CE(sat) C B Complement to Type 2SB1587 Minimum Lot-to-Lot variations for robust device performance and reliable op