Биполярный транзистор 2SD243 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD243
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 110 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 90 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 4 MHz
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: TO66
2SD243 Datasheet (PDF)
2sd2439.pdf
Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2439 DESCRIPTION With TO-3PML package Complement to type 2SB1588 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE U
2sd2438.pdf
Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2438 DESCRIPTION With TO-3PML package Complement to type 2SB1587 APPLICATIONS Audio, Series Regulator and General Purpose PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Tc=25) SYMBOL PARAMETER CONDITION
2sd2439.pdf
Equivalent circuit CBDarlington 2SD2439(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1588)Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)Symbol 2SD2439 Symbol Conditions 2SD2439Unit Unit0.20.2 5.515.6VCBO 160 ICBO VCB=1
2sd2438.pdf
CEquivalent circuitBDarlington 2SD2438(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1587)Application : Audio, Series Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SD2438 Unit Symbol Conditions 2SD2438 Unit0.20.2 5.515.6VCBO 160 V ICBO VC
2sd2439.pdf
isc Silicon NPN Darlington Power Transistor 2SD2439DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 7A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 7A, I = 7mA)CE(sat) C BComplement to Type 2SB1588Minimum Lot-to-Lot variations for robust deviceperformance and reliable op
2sd2438.pdf
isc Silicon NPN Darlington Power Transistor 2SD2438DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 6A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 6A, I = 6mA)CE(sat) C BComplement to Type 2SB1587Minimum Lot-to-Lot variations for robust deviceperformance and reliable op
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050