2SD243 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD243
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Collector-Emitter Voltage |Vce|: 90 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO66
2SD243 Transistor Equivalent Substitute - Cross-Reference Search
2SD243 Datasheet (PDF)
2sd2439.pdf
Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2439 DESCRIPTION With TO-3PML package Complement to type 2SB1588 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE U
2sd2438.pdf
Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2438 DESCRIPTION With TO-3PML package Complement to type 2SB1587 APPLICATIONS Audio, Series Regulator and General Purpose PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Tc=25) SYMBOL PARAMETER CONDITION
2sd2439.pdf
Equivalent circuit CBDarlington 2SD2439(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1588)Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)Symbol 2SD2439 Symbol Conditions 2SD2439Unit Unit0.20.2 5.515.6VCBO 160 ICBO VCB=1
2sd2438.pdf
CEquivalent circuitBDarlington 2SD2438(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1587)Application : Audio, Series Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SD2438 Unit Symbol Conditions 2SD2438 Unit0.20.2 5.515.6VCBO 160 V ICBO VC
2sd2439.pdf
isc Silicon NPN Darlington Power Transistor 2SD2439DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 7A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 7A, I = 7mA)CE(sat) C BComplement to Type 2SB1588Minimum Lot-to-Lot variations for robust deviceperformance and reliable op
2sd2438.pdf
isc Silicon NPN Darlington Power Transistor 2SD2438DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 6A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 6A, I = 6mA)CE(sat) C BComplement to Type 2SB1587Minimum Lot-to-Lot variations for robust deviceperformance and reliable op
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
