2SD34 Todos los transistores

 

2SD34 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD34

Material: Ge

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 2 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1 MHz

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO7

 Búsqueda de reemplazo de 2SD34

- Selecciónⓘ de transistores por parámetros

 

2SD34 datasheet

 0.1. Size:188K  inchange semiconductor
2sd343.pdf pdf_icon

2SD34

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD343 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.6V(Max) @I = 2.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose appli

 0.2. Size:180K  inchange semiconductor
2sd348.pdf pdf_icon

2SD34

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD348 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and switching appl

 0.3. Size:199K  inchange semiconductor
2sd347.pdf pdf_icon

2SD34

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD347 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 3.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier a

 0.4. Size:188K  inchange semiconductor
2sd345.pdf pdf_icon

2SD34

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD345 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 55V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.6V(Max) @I = 2.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose appli

Otros transistores... 2SD335 , 2SD336 , 2SD338 , 2SD338-1 , 2SD338-2 , 2SD339 , 2SD339-1 , 2SD339-2 , S8050 , 2SD340 , 2SD340-1 , 2SD340-2 , 2SD341 , 2SD341H , 2SD342 , 2SD343 , 2SD344 .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550

 

 

 

Popular searches

bc557 transistor | 2n3638 | tip127 datasheet | irlz24n | irf620 | irfp350 | 13003 transistor | c458 transistor

 

 

↑ Back to Top
.