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2SD34 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD34
   Material: Ge
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 15 V
   Tensión emisor-base (Veb): 2 V
   Corriente del colector DC máxima (Ic): 0.15 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO7
 

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2SD34 Datasheet (PDF)

 0.1. Size:188K  inchange semiconductor
2sd343.pdf pdf_icon

2SD34

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD343DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.6V(Max) @I = 2.0ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose appli

 0.2. Size:180K  inchange semiconductor
2sd348.pdf pdf_icon

2SD34

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD348DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers and switching appl

 0.3. Size:199K  inchange semiconductor
2sd347.pdf pdf_icon

2SD34

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD347DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 3.0ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier a

 0.4. Size:188K  inchange semiconductor
2sd345.pdf pdf_icon

2SD34

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD345DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 55V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.6V(Max) @I = 2.0ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose appli

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: UNR5218 | NST3904DP6 | ADY30 | 2SC2210F | 2SC4458 | CSD655 | ET409

 

 
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