All Transistors. 2SD34 Datasheet

 

2SD34 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD34
   Material of Transistor: Ge
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO7

 2SD34 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD34 Datasheet (PDF)

 0.1. Size:188K  inchange semiconductor
2sd343.pdf

2SD34
2SD34

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD343DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.6V(Max) @I = 2.0ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose appli

 0.2. Size:180K  inchange semiconductor
2sd348.pdf

2SD34
2SD34

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD348DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers and switching appl

 0.3. Size:199K  inchange semiconductor
2sd347.pdf

2SD34
2SD34

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD347DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 3.0ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier a

 0.4. Size:188K  inchange semiconductor
2sd345.pdf

2SD34
2SD34

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD345DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 55V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.6V(Max) @I = 2.0ACE(sat) CFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose appli

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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