2SD383 Todos los transistores

 

2SD383 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD383

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 300 V

Tensión colector-emisor (Vce): 300 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 40

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de transistor bipolar 2SD383

 

2SD383 Datasheet (PDF)

5.1. 2sd386a.pdf Size:138K _sanyo

2SD383
2SD383

5.2. 2sd380.pdf Size:41K _no

2SD383

 5.3. 2sd381.pdf Size:45K _no

2SD383

5.4. 2sd389.pdf Size:69K _wingshing

2SD383

2SD389 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB507 ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base voltage VEBO 7 V Collector Current (DC) IC 4 A Collector Dissipation (Tc=25? PC 30 W ? ? ? Junction Temperature Tj 150

 5.5. 2sd380.pdf Size:224K _inchange_semiconductor

2SD383
2SD383

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD380 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Vo

5.6. 2sd381.pdf Size:89K _inchange_semiconductor

2SD383
2SD383

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD381 DESCRIPTION · ·With TO-220C package ·Complement to type 2SB536 ·Low collector saturation voltage APPLICATIONS ·Audio frequency power amplifier ·Low speed power switching PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?)

5.7. 2sd388.pdf Size:114K _inchange_semiconductor

2SD383
2SD383

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD388 DESCRIPTION Ў¤ With TO-3 package Ў¤ High power dissipation APPLICATIONS Ў¤ For use in power amplifier applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER

5.8. 2sd386 2sd386a.pdf Size:125K _inchange_semiconductor

2SD383
2SD383

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD386 2SD386A DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage :VCBO=200V(min) APPLICATIONS Ў¤ For TV vertical deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO PARAMETER VCEO

5.9. 2sd389.pdf Size:260K _inchange_semiconductor

2SD383
2SD383

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD389 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·High Power Dissipation APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V V

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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