2SD383 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD383
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO3
2SD383 Transistor Equivalent Substitute - Cross-Reference Search
2SD383 Datasheet (PDF)
2sd389.pdf
2SD389 NPN EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB507ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base voltage VEBO 7 V Collector Current (DC) IC 4 A Collector Dissipation (Tc=25 PC 30 W Junction
2sd389.pdf
isc Silicon NPN Power Transistor 2SD389DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOWide Area of Safe OperationHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
2sd380.pdf
isc Silicon NPN Power Transistor 2SD380DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
2sd386.pdf
isc Silicon NPN Power Transistor 2SD386DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 1.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25
2sd382.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD382DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min.)(BR)CEOComplement to Type 2SB537Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier, low speed switching.Suitable for driver of 60~100 watts audio amplifier.ABSOLUTE
2sd386 2sd386a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD386 2SD386A DESCRIPTION With TO-220C package High voltage :VCBO=200V(min) APPLICATIONS For TV vertical deflection output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALU
2sd381.pdf
isc Silicon NPN Power Transistors 2SD381DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min.)(BR)CEOComplement to Type 2SB536Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier, low speed switching.Suitable for driver of 60~100 watts audio amplifier.ABSOLUTE MAXIMUM RATINGS(T =25
2sd388.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD388DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V (Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(T
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
