2SD386 Datasheet. Equivalente

 ..1. Size:212K  inchange semiconductor
 2sd386.pdf

isc Silicon NPN Power Transistor 2SD386 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 1.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25

 ..2. Size:125K  inchange semiconductor
 2sd386 2sd386a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD386 2SD386A DESCRIPTION With TO-220C package High voltage VCBO=200V(min) APPLICATIONS For TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALU

 0.1. Size:138K  sanyo
 2sd386a.pdf

 9.1. Size:41K  no
 2sd380.pdf

 9.2. Size:45K  no
 2sd381.pdf

 9.3. Size:69K  wingshing
 2sd389.pdf

2SD389 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB507 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base voltage VEBO 7 V Collector Current (DC) IC 4 A Collector Dissipation (Tc=25 PC 30 W Junction

 9.4. Size:212K  inchange semiconductor
 2sd389.pdf

isc Silicon NPN Power Transistor 2SD389 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Wide Area of Safe Operation High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 9.5. Size:202K  inchange semiconductor
 2sd380.pdf

isc Silicon NPN Power Transistor 2SD380 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

 9.6. Size:191K  inchange semiconductor
 2sd382.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD382 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min.) (BR)CEO Complement to Type 2SB537 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier, low speed switching. Suitable for driver of 60 100 watts audio amplifier. ABSOLUTE

 9.7. Size:213K  inchange semiconductor
 2sd381.pdf

 9.8. Size:184K  inchange semiconductor
 2sd388.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD388 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V (Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T