2SD425 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD425

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 140 V

Tensión colector-emisor (Vce): 140 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Capacitancia de salida (Cc): 600 pF

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO3

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2SD425 datasheet

 ..1. Size:208K  inchange semiconductor
 2sd425.pdf pdf_icon

2SD425

isc Silicon NPN Power Transistors 2SD425 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SB555 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for high-fidelity audio freq

 ..2. Size:116K  inchange semiconductor
 2sd425 2sd426.pdf pdf_icon

2SD425

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD425 2SD426 DESCRIPTION With TO-3 package Complement to type 2SB555/556 High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplifi

 9.1. Size:204K  inchange semiconductor
 2sd427.pdf pdf_icon

2SD425

isc Silicon NPN Power Transistors 2SD427 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High Power Dissipation- P = 80W(Max)@T =25 C C Complement to Type 2SB557 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 50W high-fidelity audio f

 9.2. Size:208K  inchange semiconductor
 2sd426.pdf pdf_icon

2SD425

isc Silicon NPN Power Transistors 2SD426 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SB556 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for high-fidelity audio freq

MOSTRAR MÁS

Otros transistores... 2SD417, 2SD418, 2SD419, 2SD420, 2SD421, 2SD422, 2SD423, 2SD424, 2SD718, 2SD426, 2SD427, 2SD427S, 2SD428, 2SD429, 2SD43, 2SD430, 2SD431