All Transistors. 2SD425 Datasheet

 

2SD425 Datasheet and Replacement


   Type Designator: 2SD425
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 140 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Collector Capacitance (Cc): 600 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO3
 

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2SD425 Datasheet (PDF)

 ..1. Size:208K  inchange semiconductor
2sd425.pdf pdf_icon

2SD425

isc Silicon NPN Power Transistors 2SD425DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SB555Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for high-fidelity audio freq

 ..2. Size:116K  inchange semiconductor
2sd425 2sd426.pdf pdf_icon

2SD425

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD425 2SD426 DESCRIPTION With TO-3 package Complement to type 2SB555/556 High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplifi

 9.1. Size:204K  inchange semiconductor
2sd427.pdf pdf_icon

2SD425

isc Silicon NPN Power Transistors 2SD427DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh Power Dissipation-: P = 80W(Max)@T =25C CComplement to Type 2SB557Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for 50W high-fidelity audio f

 9.2. Size:208K  inchange semiconductor
2sd426.pdf pdf_icon

2SD425

isc Silicon NPN Power Transistors 2SD426DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SB556Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for high-fidelity audio freq

Datasheet: 2SD417 , 2SD418 , 2SD419 , 2SD420 , 2SD421 , 2SD422 , 2SD423 , 2SD424 , 2SC2073 , 2SD426 , 2SD427 , 2SD427S , 2SD428 , 2SD429 , 2SD43 , 2SD430 , 2SD431 .

Keywords - 2SD425 transistor datasheet

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