2SD579A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD579A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 60

Encapsulados: TO66

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2SD579A datasheet

 9.1. Size:169K  nec
 2sd571.pdf pdf_icon

2SD579A

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 2sd575.pdf pdf_icon

2SD579A

 9.3. Size:217K  inchange semiconductor
 2sd570.pdf pdf_icon

2SD579A

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD570 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70V(Min.) (BR)CEO Low Collector Saturation Voltage V = 0.6V(Max.)@I = 2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS

 9.4. Size:181K  inchange semiconductor
 2sd577.pdf pdf_icon

2SD579A

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD577 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25

MOSTRAR MÁS

Otros transistores... 2SD574A, 2SD575, 2SD575L, 2SD576, 2SD577, 2SD578, 2SD578A, 2SD579, S9014, 2SD58, 2SD580, 2SD581, 2SD581A, 2SD582, 2SD582A, 2SD583, 2SD585