2SD579A Specs and Replacement

Type Designator: 2SD579A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO66

 2SD579A Substitution

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2SD579A datasheet

 9.1. Size:169K  nec

 2sd571.pdf pdf_icon

2SD579A

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2SD579A

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 9.3. Size:217K  inchange semiconductor

 2sd570.pdf pdf_icon

2SD579A

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD570 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 70V(Min.) (BR)CEO Low Collector Saturation Voltage V = 0.6V(Max.)@I = 2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS... See More ⇒

 9.4. Size:181K  inchange semiconductor

 2sd577.pdf pdf_icon

2SD579A

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD577 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒

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Detailed specifications: 2SD574A, 2SD575, 2SD575L, 2SD576, 2SD577, 2SD578, 2SD578A, 2SD579, S9014, 2SD58, 2SD580, 2SD581, 2SD581A, 2SD582, 2SD582A, 2SD583, 2SD585

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