2SD629 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD629
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 100 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 10000
Paquete / Cubierta: TO3
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2SD629 Datasheet (PDF)
2sd627.pdf

isc Silicon NPN Power Transistor 2SD627DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Coll
2sd628.pdf

isc Silicon NPN Darlington Power Transistor 2SD628DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min.)CEO(sus)High DC Current Gain-: h = 1000(Min.)@I = 5AFE CLow Collector Saturation Voltage-: V = 2.0V(Max.)@ I = 5ACE (sat) CComplement to Type 2SB638Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: RT3YB7M | 2SA1706T-AN | 2SA815 | 2SA795A | BC848CW-G | 3DG2413K
History: RT3YB7M | 2SA1706T-AN | 2SA815 | 2SA795A | BC848CW-G | 3DG2413K



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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