2SD629 Specs and Replacement

Type Designator: 2SD629

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10000

Noise Figure, dB: -

Package: TO3

 2SD629 Substitution

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2SD629 datasheet

 9.1. Size:71K  sanyo

 2sd627.pdf pdf_icon

2SD629

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 9.2. Size:113K  sanyo

 2sd621.pdf pdf_icon

2SD629

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 9.3. Size:202K  inchange semiconductor

 2sd627.pdf pdf_icon

2SD629

isc Silicon NPN Power Transistor 2SD627 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Coll... See More ⇒

 9.4. Size:208K  inchange semiconductor

 2sd628.pdf pdf_icon

2SD629

isc Silicon NPN Darlington Power Transistor 2SD628 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min.) CEO(sus) High DC Current Gain- h = 1000(Min.)@I = 5A FE C Low Collector Saturation Voltage- V = 2.0V(Max.)@ I = 5A CE (sat) C Complement to Type 2SB638 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ... See More ⇒

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Detailed specifications: 2SD621, 2SD622, 2SD624, 2SD625, 2SD626, 2SD627, 2SD628, 2SD628H, TIP122, 2SD629H, 2SD63, 2SD630, 2SD631, 2SD632, 2SD633, 2SD634, 2SD635

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