2SD646 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SD646
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 400 W
   Tensión colector-base (Vcb): 600 V
   Tensión colector-emisor (Vce): 450 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 100 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 150
Paquete / Cubierta: TO3A-1

Búsqueda de reemplazo de transistor bipolar 2SD646

2SD646 Datasheet (PDF)

9.1. Size:102K toshiba
2sd647 2sd697.pdf

9.2. Size:98K toshiba
2sd648.pdf

9.3. Size:92K toshiba
2sd641.pdf

9.4. Size:91K no
2sd640.pdf

9.5. Size:221K inchange semiconductor
2sd649.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD649 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Reliability APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1500 V VCES Collector-Emitter V

9.6. Size:199K inchange semiconductor
2sd640.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD640DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V (Max.)@ I = 5ACE(sat) CExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switching applicatio

9.7. Size:205K inchange semiconductor
2sd641.pdf

isc Silicon NPN Power Transistor 2SD641DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V (Max.)@ I = 10ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switching applications.High power amplifier applications.ABSOLUTE MAXI

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: T2679 | 2SC3664

Liste

Recientemente añadidas las descripciónes de los transistores:

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