2SD646 Specs and Replacement

Type Designator: 2SD646

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 400 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 100 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: TO3A-1

 2SD646 Substitution

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2SD646 datasheet

 9.1. Size:102K  toshiba

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2SD646

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2sd648.pdf pdf_icon

2SD646

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 9.3. Size:92K  toshiba

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2SD646

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 9.4. Size:91K  no

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2SD646

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Detailed specifications: 2SD639, 2SD64, 2SD640, 2SD641, 2SD642, 2SD643, 2SD644, 2SD645, S8550, 2SD646A, 2SD647, 2SD647A, 2SD648, 2SD648A, 2SD649, 2SD65, 2SD650

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