2SD682 Todos los transistores

 

2SD682 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD682
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 110 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 7000
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar 2SD682

 

2SD682 Datasheet (PDF)

 9.1. Size:116K  toshiba
 2sd687.pdf

2SD682 2SD682

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.2. Size:78K  toshiba
 2sd688.pdf

2SD682

 9.3. Size:206K  inchange semiconductor
 2sd683.pdf

2SD682 2SD682

isc Silicon NPN Darlington Power Transistor 2SD683DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High DC Current Gain-: h = 500(Min.)@ I = 5AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage and high power switching applications.Motor driver applications.ABSOLUTE MAXIMUM RATIN

 9.4. Size:207K  inchange semiconductor
 2sd684.pdf

2SD682 2SD682

isc Silicon NPN Darlington Power Transistor 2SD684DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)High DC Current Gain-: h = 1500(Min.)@I = 2AFE CLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter applications.

 9.5. Size:209K  inchange semiconductor
 2sd687.pdf

2SD682 2SD682

isc Silicon NPN Darlington Power Transistor 2SD687DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applications.

 9.6. Size:212K  inchange semiconductor
 2sd689.pdf

2SD682 2SD682

isc Silicon NPN Darlington Power Transistor 2SD689DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CComplement to Type 2SB679Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION

 9.7. Size:210K  inchange semiconductor
 2sd686.pdf

2SD682 2SD682

isc Silicon NPN Darlington Power Transistor 2SD686DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 3ACE(sat) CComplement to Type 2SB676Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SA1768 | 2SA1744L | 2SD5072

 

 
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