2SD682 Specs and Replacement
Type Designator: 2SD682
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 110 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 7000
Package: TO3
2SD682 Substitution
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2SD682 datasheet
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
isc Silicon NPN Darlington Power Transistor 2SD683 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High DC Current Gain- h = 500(Min.)@ I = 5A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage and high power switching applications. Motor driver applications. ABSOLUTE MAXIMUM RATIN... See More ⇒
Detailed specifications: 2SD678A, 2SD679, 2SD679A, 2SD68, 2SD680, 2SD680A, 2SD681, 2SD681A, BD139, 2SD682A, 2SD683, 2SD683A, 2SD684, 2SD684A, 2SD685, 2SD686, 2SD687
Keywords - 2SD682 pdf specs
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History: BCX51
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