2SD723 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Product Specification isc Silicon NPN Power Transistor 2SD723 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR) CEO DC Current Gain -h = 50(Min)@ I = 0.5A FE C Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD725 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO

isc Silicon NPN Power Transistor 2SD728 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB692 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and power switching applications. ABSOLUTE

isc Silicon NPNPower Transistor 2SD726 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High Power Dissipation Complement to Type 2SB690 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD727 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB691 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and power switching