2SD723 Todos los transistores

 

2SD723 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD723
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 135 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar 2SD723

 

2SD723 Datasheet (PDF)

 ..1. Size:186K  inchange semiconductor
2sd723.pdf

2SD723
2SD723

isc Product Specificationisc Silicon NPN Power Transistor 2SD723DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR) CEODC Current Gain -h = 50(Min)@ I = 0.5AFE CFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and

 9.1. Size:38K  no
2sd721.pdf

2SD723

 9.2. Size:25K  no
2sd72.pdf

2SD723

 9.3. Size:211K  inchange semiconductor
2sd725.pdf

2SD723
2SD723

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD725DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO

 9.4. Size:213K  inchange semiconductor
2sd728.pdf

2SD723
2SD723

isc Silicon NPN Power Transistor 2SD728DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB692Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and powerswitching applications.ABSOLUTE

 9.5. Size:213K  inchange semiconductor
2sd726.pdf

2SD723
2SD723

isc Silicon NPNPower Transistor 2SD726DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SB690Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

 9.6. Size:206K  inchange semiconductor
2sd727.pdf

2SD723
2SD723

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD727DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB691Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and powerswitching

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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