2SD723 Specs and Replacement
Type Designator: 2SD723
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO220
2SD723 Substitution
- BJT ⓘ Cross-Reference Search
2SD723 datasheet
isc Product Specification isc Silicon NPN Power Transistor 2SD723 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR) CEO DC Current Gain -h = 50(Min)@ I = 0.5A FE C Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD725 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO ... See More ⇒
Detailed specifications: 2SD717Y, 2SD718, 2SD718O, 2SD718R, 2SD72, 2SD720, 2SD721, 2SD722, 9014, 2SD724, 2SD725, 2SD726, 2SD727, 2SD728, 2SD729, 2SD729H, 2SD72K
Keywords - 2SD723 pdf specs
2SD723 cross reference
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History: 2SD2549
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