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2SD770 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD770
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.4 W
   Tensión colector-base (Vcb): 50 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: TO92
 

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2SD770 Datasheet (PDF)

 9.1. Size:231K  toshiba
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2SD770

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.2. Size:161K  nec
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2SD770

 9.3. Size:166K  nec
 2sd773.pdf pdf_icon

2SD770

 9.4. Size:208K  inchange semiconductor
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2SD770

isc Silicon NPN Power Transistor 2SD772DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 1.6V(Max.) @I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

MOSTRAR MÁS

Otros transistores... 2SD764 , 2SD765 , 2SD766 , 2SD767 , 2SD768 , 2SD768K , 2SD769 , 2SD77 , 13003 , 2SD771 , 2SD772 , 2SD772A , 2SD772B , 2SD773 , 2SD774 , 2SD776 , 2SD777 .

History: 2SD780 | 2SD780DW3 | 92PU100 | 2SA1615-Z | 2SD773 | 2SD77AH | 2SA1593S-E

 

 
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