2SD770 Datasheet. Specs and Replacement

Type Designator: 2SD770  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO92

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2SD770 datasheet

 9.1. Size:231K  toshiba

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2SD770

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2SD770

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 9.4. Size:208K  inchange semiconductor

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2SD770

isc Silicon NPN Power Transistor 2SD772 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min.) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.6V(Max.) @I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T... See More ⇒

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Detailed specifications: 2SD764, 2SD765, 2SD766, 2SD767, 2SD768, 2SD768K, 2SD769, 2SD77, 2N3906, 2SD771, 2SD772, 2SD772A, 2SD772B, 2SD773, 2SD774, 2SD776, 2SD777

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