All Transistors. 2SD770 Datasheet

 

2SD770 Datasheet and Replacement


   Type Designator: 2SD770
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO92
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2SD770 Datasheet (PDF)

 9.1. Size:231K  toshiba
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2SD770

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 9.2. Size:161K  nec
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2SD770

 9.3. Size:166K  nec
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2SD770

 9.4. Size:208K  inchange semiconductor
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2SD770

isc Silicon NPN Power Transistor 2SD772DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 1.6V(Max.) @I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

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Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 2SB1296 | DDTC143FE | DDTC114TKA | 2SC1940 | CSC1398R | DMA204A0 | 2SB1325

Keywords - 2SD770 transistor datasheet

 2SD770 cross reference
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