All Transistors. 2SD770 Datasheet

 

2SD770 Datasheet and Replacement


   Type Designator: 2SD770
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO92

 2SD770 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD770 Datasheet (PDF)

 9.1. Size:231K  toshiba
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2SD770

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 9.2. Size:161K  nec
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2SD770

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 9.3. Size:166K  nec
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2SD770

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 9.4. Size:208K  inchange semiconductor
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2SD770

isc Silicon NPN Power Transistor 2SD772 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min.) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.6V(Max.) @I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T... See More ⇒

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Datasheet: 2SD764 , 2SD765 , 2SD766 , 2SD767 , 2SD768 , 2SD768K , 2SD769 , 2SD77 , 2N3906 , 2SD771 , 2SD772 , 2SD772A , 2SD772B , 2SD773 , 2SD774 , 2SD776 , 2SD777 .

History: BFT84 | 2SC2982B | 2SC2981 | NB024F | NB211H | NB023HY | NSS40301MD

Keywords - 2SD770 transistor datasheet

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