2SD83 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD83
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 150 V
Tensión colector-emisor (Vce): 75 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar 2SD83
2SD83 Datasheet (PDF)
2sd833.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sd835.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sd833.pdf
isc Silicon NPN Darlington Power Transistor 2SD833DESCRIPTIONHigh DC Current Gain-: h = 4000(Min) @I = 3AFE CLow Collector Saturation Voltage-: V = 1.5V(Max.) @ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifiersRelay& solenoid driversMotor controlsGeneral purpose power ampli
2sd835.pdf
isc Silicon NPN Darlington Power Transistor 2SD835DESCRIPTIONHigh DC Current Gain-: h = 400(Min) @I = 4AFE CLow Collector Saturation Voltage-: V = 1.5V(Max.) @ I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ignitorRelay& solenoid driversMotor controlsSwitching regulatorsABSOLUTE M
2sd836.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD836DESCRIPTIONHigh DC Current Gain-: h = 1000(Min.)@I = 2AFE CHigh Switching SpeedComplement to Type 2SB750Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAF power amplifiersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)a
2sd837.pdf
isc Silicon NPN Darlington Power Transistor 2SD837DESCRIPTIONHigh DC Current Gain-: h = 1000(Min.)@I = 3AFE CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifiersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt
2sd834.pdf
isc Silicon NPN Darlington Power Transistor 2SD834DESCRIPTIONHigh DC Current Gain: h = 1500(Min) @ I = 2A, V = 2VFE C CELow Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CWide Area of Safe OperationHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ignitorRelay& solenoid drivers
Otros transistores... 2SD825A , 2SD826 , 2SD826E , 2SD826F , 2SD826G , 2SD827 , 2SD828 , 2SD829 , 2N3904 , 2SD830 , 2SD831 , 2SD832 , 2SD833 , 2SD834 , 2SD835 , 2SD836 , 2SD836A .
